Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device
AssigneeInfineon Technologies Austria AG
InventorsGerhard Schmidt, Josef Bauer
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Abstract
Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.
Claims2
A semiconductor device having a thickness L, comprising:
- a p-doped region;
- an n-doped region;
- and
- a vertically inhomogeneous heavy metal doping profile comprising a first heavy metal doping concentration greater than C1 across a first depth region of a thickness greater than L/6 and a second heavy metal doping concentration smaller than C2 across a second depth region of a thickness greater than L/6, wherein C1>3×C2, wherein the semiconductor device further comprises a further p-doped region or a further n-doped region, wherein the further p-doped region or the further n-doped region is arranged such that the semiconductor includes a bipolar npn transistor structure or a bipolar pnp transistor structure, which further comprises a control terminal, a collector terminal and a metal-oxide semiconductor field-effect transistor (MOSFET) structure, which are connected such that a current between an emitter and the collector terminal is controlled by the MOSFET structure.
A semiconductor device in a semiconductor substrate, comprising:
- a pn junction zone or a metal-semiconductor diode zone in the semiconductor substrate;
- a vertically inhomogeneous distribution of a heavy metal in the semiconductor device, wherein a region with a maximum heavy metal doping concentration is arranged in a depth region of the pn junction zone or the metal-semiconductor diode zone in the semiconductor device;
- and
- a vertically homogeneous lattice defect distribution in the semiconductor device with a the lattice defect density greater than 1×1012 cm−3.
Dependencies are inferred from the claim text.