Graphene devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsWenxu Xianyu, Chang-youl Moon, Jeong-yub Lee, Chang-seung Lee
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Abstract
A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.
Claims23
A method of manufacturing a graphene device, the method comprising:
- forming at least one stacked structure on a first substrate, the at least one stacked structure including a sacrificial layer, a catalyst layer, and a graphene layer sequentially stacked thereon;
- adhering a second substrate onto the at least one stacked structure;
- and
- separating the first substrate by etching the sacrificial layer;
- wherein the etching comprises one of dry etching and wet etching.
A method of manufacturing a graphene device, the method comprising:
- preparing a stacked pattern on a substrate, the stacked pattern having a channel layer including graphene and a conductive layer sequentially stacked thereon;
- forming a capping layer to cover the stacked pattern;
- patterning the capping layer and the conductive layer to form a source electrode and a drain electrode from the conductive layer and expose a channel region of the channel layer between the source electrode and the drain electrode;
- forming a gate insulating layer on the capping layer to cover the channel region of the channel layer between the source electrode and the drain electrode;
- and
- forming a gate on the gate insulating layer.
Dependencies are inferred from the claim text.