Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato
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Abstract
An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.
Claims19
A method for manufacturing a semiconductor device, comprising forming an insulating layer over an oxide semiconductor layer, wherein the insulating layer comprises a silicon peroxide radical.
A method for manufacturing a semiconductor device, comprising:
- forming an insulating layer over a substrate;
- and
- forming an oxide semiconductor layer over the insulating layer,
- wherein the insulating layer comprises a silicon peroxide radical.
Dependencies are inferred from the claim text.