Method for manufacturing a semiconductor component that includes a common mode choke and structure
AssigneeSemiconductor Components Industries, LLC
InventorsLi Jiang, Ryan J. Hurley, Sudhama C. Shastri, Yenting Wen, Wang-Chang Albert Gu, Phillip Holland, Der Min Liou, Rong Liu, Wenjiang Zeng
Life of this patent
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Abstract
A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.
Claims29
A method for manufacturing a semiconductor component, comprising:
- providing a common mode choke formed from a semiconductor substrate, the common mode choke having first, second, third, and fourth terminals;
- coupling a first transient voltage suppression device to the first terminal;
- coupling a second transient voltage suppression device to the second terminal;
- coupling a third transient voltage suppression device to the third terminal;
- and
- coupling a fourth transient voltage suppression device to the fourth terminal.
A method for manufacturing a semiconductor component, comprising:
- providing a common mode choke formed from a semiconductor substrate, the common mode choke having first, second, third, and fourth terminals, wherein providing the common mode choke formed from the semiconductor substrate comprises:
- providing a semiconductor material having a major surface;
- forming a first coil over the semiconductor material, the first coil having first and second terminals that serve as the first and second terminals of the common mode choke;
- forming a first layer of dielectric material over the first coil;
- and
- forming a second coil over the first layer of dielectric material, the second coil having first and second terminals that serve as the third and fourth terminals of the common mode choke, the first and second coils forming the common mode choke, wherein forming the second coil includes forming the second coil to be offset from the first coil in a first direction and a second direction;
- and
- coupling at least one transient voltage suppression device to the common mode choke.
A method for manufacturing a semiconductor component, comprising:
- providing a common mode choke formed from a semiconductor substrate, the common mode choke having first, second, third, and fourth terminals;
- and
- coupling at least one transient voltage suppression device to the common mode choke, wherein providing the common mode choke includes monolithically integrating the common mode choke and the transient voltage suppression device in a common semiconductor chip.
A method for manufacturing a semiconductor component, comprising:
- providing a common mode choke formed from a semiconductor substrate, the common mode choke having first, second, third, and fourth terminals, wherein providing the common mode choke comprises:
- providing a substrate;
- forming a first layer of magnetic material over the substrate;
- and
- forming a first coil over the first layer of magnetic material;
- and
- coupling at least one transient voltage suppression device to the common mode choke.
A method for manufacturing a semiconductor component, comprising:
- providing a common mode choke formed from a semiconductor substrate, the common mode choke having first, second, third, and fourth terminals, wherein providing the common mode choke includes:
- providing a substrate;
- forming a first coil over the substrate;
- forming a first material over the first coil;
- forming a second coil over the first material;
- and
- forming a layer of magnetic material over the second coil;
- and
- coupling at least one transient voltage suppression device to the common mode choke.
A monolithically integrated semiconductor component, comprising:
- a common mode choke, wherein the common mode choke comprises:
- a first dielectric material;
- a first magnetic material formed over the first dielectric material;
- a first winding formed over the first dielectric material, the first magnetic material between the first winding and the first dielectric material;
- a second dielectric material formed over the first winding;
- a second winding formed over the second dielectric material;
- and
- a transient voltage suppression structure coupled to the common mode choke.
Dependencies are inferred from the claim text.