Method of reducing contact resistance
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsFareen Adeni Khaja, Benjamin Colombeau
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Abstract
In one embodiment a method of forming low contact resistance in a substrate includes forming a silicide layer on the substrate, the silicide layer and substrate defining an interface therebetween in a source/drain region, and performing a hot implant of a dopant species into the silicide layer while the substrate is at a substrate temperature greater than 150° C., where the hot implant is effective to generate an activated dopant layer containing the dopant species, and the activated dopant layer extends from the interface into the source/drain region.
Claims20
A method of forming low contact resistance in a substrate, comprising
- forming a silicide layer on the substrate, the silicide layer and substrate defining an interface therebetween in a source/drain region;
- and
- performing a hot implant of a dopant species into the silicide layer while the substrate is at a substrate temperature greater than 150° C., the hot implant effective to generate an activated dopant layer containing the dopant species, the activated dopant layer extending from the interface into the source/drain region, wherein the activated dopant layer comprises a dopant segregated Schottky contact in which a Schottky barrier height between the silicide and source/drain region is lower than a Schottky barrier height between the silicide and source/drain region when the activated dopant layer is not present.
The method of clam 1, further comprising implanting the dopant species into the silicide layer at an ion energy of 1 keV to 10 keV.
A method of forming low contact resistance in a substrate, comprising
- forming a silicide contact layer on a source/drain region of the substrate, the source/drain region comprising a silicon-containing material, the silicide layer and substrate defining an interface therebetween in a source/drain region;
- and
- performing a hot implant of a dopant species into the silicide layer while the substrate is at a substrate temperature greater than 150° C., wherein the hot implant comprises an ion dose effective to generate an activated dopant layer containing the dopant species at a peak concentration greater than about 1E20/cm2 that extends from the interface into the source/drain region, wherein the activated dopant layer comprises a dopant segregated Schottky contact in which a Schottky barrier height between the silicide and source/drain region is lower than a Schottky barrier height between the silicide and source/drain region when the activated dopant layer is not present.
A method of forming low contact resistance in a substrate, comprising
- forming a silicide layer on the substrate, the silicide layer and substrate defining an interface therebetween in a source/drain region;
- and
- performing a hot implant of a dopant species into the silicide layer while the substrate is at a substrate temperature greater than 150° C., the hot implant effective to generate an activated dopant layer containing the dopant species, the activated dopant layer extending from the interface into the source/drain region, wherein performing the hot implant comprises:
- performing a first implant process comprising implanting a p-type dopant into source/drain regions of first transistors of the substrate, the first implant process performed at a first substrate temperature greater than 150°, and
- performing a second implant process comprising implanting a second dopant species comprising an n-type dopant into source/drain regions of second transistors of the substrate, the second implant process performed at a second substrate temperature different from the first substrate temperature and greater than 150° C.
Dependencies are inferred from the claim text.