Fin-type semiconductor device
AssigneeQUALCOMM Incorporated
InventorsXia Li, Bin Yang, Stanley Seungchul Song
Life of this patent
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Abstract
An apparatus comprises a substrate and a fin-type semiconductor device extending from the substrate. The fin type semiconductor device comprises a fin that comprises a first region having a first doping concentration and a second region having a second doping concentration. The first doping concentration is greater than the second doping concentration. The fin type semiconductor device also comprises an oxide layer. Prior to source and drain formation of the fin-type semiconductor device, a doping concentration of the oxide layer is less than the first doping concentration.
Claims36
A method comprising:
- forming a fin that extends from a substrate, wherein forming the fin comprises implanting first ion implants into the substrate at a first depth, wherein the fin comprises a first region having a first doping concentration and a second region having a second doping concentration, wherein the first region comprises at least one of the first ion implants, and wherein the first doping concentration is greater than the second doping concentration;
- forming a second fin that extends from the substrate, wherein forming the second fin comprises implanting second ion implants into the substrate at a second depth different than the first depth, wherein the second fin comprises a third region having a third doping concentration and a fourth region having a fourth doping concentration, and wherein the third region comprises at least one of the first ion implants;
- and
- forming an oxide layer on the substrate, wherein prior to source and drain formation of a fin-type semiconductor device that includes the fin, a doping concentration of the oxide layer is less than the first doping concentration.
A method comprising:
- forming a fin that extends from a substrate, wherein the fm comprises a first region having a first doping concentration and a second region having a second doping concentration, wherein the fin has a first effective height defined by a first distance from a top of the fin to a first location within the first region, and wherein the first doping concentration is greater than the second doping concentration;
- forming a second fin that extends from the substrate, wherein the second fin comprises a third region having a third doping concentration and a fourth region having a fourth doping concentration, wherein the second fin has a second effective height defined by a second distance from a top of the second fin to a second location within the third region, wherein the second effective height is different than the first effective height;
- and
- forming an oxide layer on the substrate, wherein prior to source and drain formation of a fin-type semiconductor device that includes the fin, a doping concentration of the oxide layer is less than the first doping concentration.
An apparatus comprising a substrate and a fin-type semiconductor device extending from the substrate, the fin-type semiconductor device comprising:
- a fin comprising a first region having a first doping concentration and a second region having a second doping concentration, wherein the first doping concentration is greater than the second doping concentration, and wherein the fin has a first effective height defined by a first distance from a top of the fin to a first location within the first region;
- a second fin comprising a third region having a third doping concentration and a fourth region above the third region and having a fourth doping concentration, wherein the second fin has a second effective height defined by a second distance from a top of the second fin to a second location within the third region;
- and
- an oxide layer coupled to at least one of the first region and the third region;
- wherein the first effective height is different than the second effective height.
An apparatus comprising a substrate and a fin-type semiconductor device extending from the substrate, the fin-type semiconductor device comprising:
- a fin comprising a first region having a first doping concentration and a second region having a second doping concentration, wherein the first region is formed by ion implantation at a first depth using a first implant energy level, and wherein the first doping concentration is greater than the second doping concentration;
- a second fin comprising a third region having a third doping concentration and a fourth region above the third region and having a fourth doping concentration, wherein the third region is formed by ion implantation at a second depth using a second implant energy level;
- and
- an oxide layer coupled to at least one of the first region and the third region.
An apparatus comprising a substrate and a fin-type semiconductor device extending from the substrate, the fin-type semiconductor device comprising:
- a fin comprising a first region having a first doping concentration and a second region having a second doping concentration, wherein the fin comprises first ion implants implanted into the substrate at a first depth and second ion implants implanted into the substrate at a second depth different than the first depth, wherein the first doping concentration is greater than the second doping concentration;
- a second fin comprising a third region having a third doping concentration and a fourth region above the third region and having a fourth doping concentration, wherein each of the first region and the third region comprises at least one of the first ion implants;
- and
- an oxide layer coupled to at least one of the first region and the third region.
Dependencies are inferred from the claim text.