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US 8,999,788 B2Granted
Manufacturing method of GaN-based semiconductor device and semiconductor device
AssigneesTohoku University, Furukawa Electric Co., Ltd.
InventorsHiroshi Kambayashi, Akinobu Teramoto, Tadahiro Ohmi
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Abstract
Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas.
Claims11
A method of manufacturing a gallium-nitride-based semiconductor device, comprising:
- forming a first semiconductor layer of a gallium-nitride-based semiconductor;
- forming a recessed portion by dry etching a portion of the first semiconductor layer by a microwave plasma process using a bromine-based gas;
- forming a first sacrificial layer that contacts the first semiconductor layer and has a higher solid solubility for impurities included in the first semiconductor layer than the first semiconductor layer;
- annealing the first sacrificial layer and the first semiconductor layer;
- and
- removing the first sacrificial layer through a wet process, wherein
- forming the recessed portion includes etching, via the microwave plasma process, a region from which the first sacrificial layer has been removed.
4 more elements
A method of manufacturing a gallium-nitride-based semiconductor device, comprising:
- forming a first semiconductor layer of a gallium-nitride-based semiconductor;
- forming a recessed portion by dry etching a portion of the first semiconductor layer by a microwave plasma process using a bromine-based gas;
- and
- forming a second semiconductor layer below the first semiconductor layer, wherein
- the recessed portion passes through the first semiconductor layer in a depth direction and partially exposes the second semiconductor layer, the method further comprising:
- forming a second sacrificial layer that contacts the exposed surface of the second semiconductor layer in the recessed portion and that has a higher solid solubility for impurities included in the second semiconductor layer than the second semiconductor layer;
- annealing the second sacrificial layer and the second semiconductor layer;
- and
- removing the second sacrificial layer through a wet process.
6 more elements
Dependencies are inferred from the claim text.