Methods of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• forming first auxiliary patterns;
• alternately forming first material layers and second material layers on sidewalls of the first auxiliary patterns so that a gap region between the first auxiliary patterns adjacent to each other is filled;
• removing the second material layers;
• and
• forming charge storage layers in a dot form including nanodots by filling the regions from which the second material layers have been removed with the nanodots.

A method of manufacturing a semiconductor device, the method comprising:

• forming first auxiliary patterns;
• alternately forming first material layers and second material layers on sidewalls of the first auxiliary patterns so that a gap region between the first auxiliary patterns adjacent to each other is filled;
• forming an interlayer insulating layer on the first material layers and the second material layers which have been alternately formed;
• forming second auxiliary patterns, disposed to cross the first auxiliary patterns, on the interlayer insulating layer;
• alternately forming third material layers and fourth material layers on sidewalls of the second auxiliary patterns so that a gap region between the second auxiliary patterns adjacent to each other is filled;
• removing the fourth material layers between the adjacent second auxiliary patterns;
• etching the interlayer insulating layer exposed by removing the fourth material layers;
• etching the second material layers exposed by etching the interlayer insulating layer;
• and
• forming charge storage layers in respective regions from which the second material layers have been etched.