Process of forming an electronic device including a vertical conductive structure

A process of forming an electronic device comprising:

• providing a workpiece including a buried conductive region and a semiconductor layer over the buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface, and wherein the buried conductive region is disposed closer to the opposing surface than to the primary surface;
• forming a first conductive electrode;
• forming a gate electrode after forming the first conductive electrode;
• and
• forming a vertical conductive region adjacent to the primary surface and extending through the semiconductor layer toward the buried conductive region, wherein forming the vertical conductive region is performed after forming the gate electrode and forming the first conductive electrode,
• wherein in a finished device, the first conductive electrode and the gate electrode are electrically isolated from each other.

A process of forming an electronic device comprising:

• providing a workpiece including a buried conductive region and a semiconductor layer over the buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface, and wherein the buried conductive region is disposed closer to the opposing surface than to the primary surface;
• forming a conductive electrode by:
• forming a conductive layer;
• and
• patterning the conductive layer to define an opening above a region of the semiconductor layer in which the vertical conductive region is subsequently formed;
• forming a source region of a transistor after patterning the conductive layer;
• and
• forming a vertical conductive region adjacent to the primary surface and extending through the semiconductor layer toward the buried conductive region, wherein forming the vertical conductive region is performed after forming the conductive electrode,
• wherein in a finished device, the conductive electrode and the source region are electrically connected to each other.