Back to results
US 8,999,778 B2Granted
Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
AssigneeArizona Board of Regents
InventorsShawn O'Rourke, Curtis Moyer, Scott Ageno, Dirk Bottesch, Barry O'Brien, Michael Marrs
Life of this patent
Estimating the term…
Abstract
Some embodiments include a method of providing a semiconductor device. The method can include: (a) providing a flexible substrate; (b) depositing at least one layer of material over the flexible substrate, wherein the deposition of the at least one layer of material over the flexible substrate occurs at a temperature of at least 180° C.; and (c) providing a diffusion barrier between a metal layer and an a-Si layer. Other embodiments are disclosed in this application.
Claims20
A method of providing a semiconductor device, the method comprising:
- providing a carrier substrate;
- providing a flexible substrate, wherein the flexible substrate is planarized;
- providing a protective template;
- attaching a protective material to the flexible substrate;
- coupling the protective template to the flexible substrate such that the protective material is at least partially located between the protective template and the flexible substrate;
- after coupling the protective template to the flexible substrate, coupling the carrier substrate to the flexible substrate with an adhesive having a bonding force;
- after coupling the carrier substrate to the flexible substrate, depositing a gate metal layer over the flexible substrate;
- depositing one or more silicon comprising layers over the gate metal layer, wherein a temperature of the depositing the one or more silicon comprising layers reaches at least 180° C.;
- depositing one or more contact elements over the one or more silicon comprising layers, wherein the one or more contact elements comprises a diffusion barrier;
- depositing a first dielectric material over the one or more contact elements, wherein the first dielectric material comprises an organic siloxane-based dielectric material;
- depositing a second dielectric material over the first dielectric material, wherein the second dielectric material comprises silicon nitride;
- baking the first dielectric material, the second dielectric material, the flexible substrate, the carrier substrate, the gate metal layer, the one or more silicon comprising layers, and the one or more contact elements, wherein the temperature of the baking reaches at least 200° C.;
- and
- after the baking and while the adhesive is bonding the carrier substrate to the flexible substrate with the bonding force, decoupling the flexible substrate from the carrier substrate, wherein the decoupling consists of peeling the flexible substrate from the carrier substrate.
11 more elements
A method of providing a semiconductor device, the method comprising:
- providing a carrier substrate;
- providing a flexible substrate, wherein the flexible substrate is planarized;
- providing a protective template;
- attaching a protective material to the flexible substrate;
- coupling the protective template to the flexible substrate such that the protective material is at least partially located between the protective template and the flexible substrate;
- after coupling the protective template to the flexible substrate, coupling the carrier substrate to the flexible substrate with an adhesive having a bonding force, wherein coupling the carrier substrate to the flexible substrate comprises:
- spin-coating the adhesive over the flexible substrate;
- and
- laminating the carrier substrate and the flexible substrate with the adhesive located between the carrier substrate and the flexible substrate;
- after coupling the carrier substrate to the flexible substrate, depositing a gate metal layer over the flexible substrate;
- depositing one or more silicon comprising layers over the gate metal layer, wherein a temperature of the depositing the one or more silicon comprising layers reaches at least 180° C.;
- depositing one or more contact elements over the one or more silicon comprising layers, wherein the one or more contact elements comprises a diffusion barrier;
- depositing a first dielectric material over the one or more contact elements, wherein the first dielectric material comprises an organic siloxane-based dielectric material;
- depositing a second dielectric material over the first dielectric material, wherein the second dielectric material comprises silicon nitride;
- baking the first dielectric material, the second dielectric material, the flexible substrate, the carrier substrate, the gate metal layer, the one or more silicon comprising layers, and the one or more contact elements, wherein the temperature of the baking reaches at least 200° C.;
- and
- after the baking and while the adhesive is bonding the carrier substrate to the flexible substrate with the bonding force, decoupling the flexible substrate from the carrier substrate, wherein the decoupling consists of peeling the flexible substrate from the carrier substrate.
14 more elements
Dependencies are inferred from the claim text.