Bulk fin-field effect transistors with well defined isolation
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita
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Abstract
A process fabricates a fin field-effect-transistor by implanting a dopant into an exposed portion of a semiconductor substrate within a cavity. The cavity is formed in a dielectric layer on the semiconductor substrate. The cavity exposes the portion of the semiconductor substrate within the cavity. A semiconductor layer is epitaxially grown within the cavity atop the dopant implanted exposed portion of the semiconductor substrate. A height of the cavity defines a height of the epitaxially grown semiconductor.
Claims15
A method for forming a fin field-effect-transistor, the method comprising:
- with a cavity formed in a dielectric layer on a semiconductor substrate, and wherein the cavity exposing a portion of the semiconductor substrate within the cavity, implanting a dopant into the exposed portion of the semiconductor substrate within the cavity, wherein the dopant is a punch-through stopper dopant;
- epitaxially growing a semiconductor layer within the cavity atop the dopant implanted exposed portion of the semiconductor substrate, where a height of the cavity defines a height of the epitaxially grown semiconductor;
- and
- removing, after the semiconductor layer has been epitaxially grown, the dielectric layer to form a fin structure comprising the semiconductor layer, the fin structure atop the dopant implanted exposed portion of the semiconductor substrate.
A method for forming a fin field-effect-transistor, the method comprising:
- with a dummy fin structure formed of dielectric material on a semiconductor substrate, forming a second dielectric layer on the semiconductor substrate, the second dielectric layer surrounding the dummy fin structure;
- removing the dummy fin structure so that a cavity is formed within the second dielectric layer, wherein the cavity exposes a portion of the semiconductor substrate within the cavity;
- implanting a dopant into the exposed portion of the semiconductor substrate within the cavity, wherein the dopant is a punch-through stopper dopant;
- epitaxially growing a semiconductor layer within the cavity atop the dopant implanted exposed portion of the semiconductor substrate;
- and
- removing, after the semiconductor layer has been epitaxially grown, the second dielectric layer to form a fin structure comprising the semiconductor layer, the fin structure atop the dopant implanted exposed portion of the semiconductor substrate.
A method for forming a fin field-effect-transistor, the method comprising:
- with a dummy fin structure formed of dielectric material on a semiconductor substrate, forming a second dielectric layer on the semiconductor substrate, the second dielectric layer surrounding the dummy fin structure;
- removing the dummy fin structure so that a cavity is formed within the second dielectric layer, wherein the cavity exposes a portion of the semiconductor;
- implanting a dopant into the exposed portion of the semiconductor substrate within the cavity, wherein the dopant is a punch-through stopper dopant;
- epitaxially growing a semiconductor layer within the cavity atop the dopant implanted exposed portion of the semiconductor substrate;
- after epitaxially growing the semiconductor layer, removing the second dielectric layer to form a fin structure comprising the semiconductor layer, the fin structure atop the dopant implanted exposed portion of the semiconductor substrate;
- and
- forming a gate structure in direct contact with at least a portion of the fin structure, wherein forming the gate structure comprises:
- forming a third dielectric layer on a portion of the fin structure;
- and
- forming a conductive layer on at the third dielectric layer.
Dependencies are inferred from the claim text.