Processing method of stacked-layer film and manufacturing method of semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKazuya Hanaoka, Shinya Sasagawa
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Abstract
In a processing method of a stacked-layer film in which a metal film is provided on an oxide insulating film, plasma containing an oxygen ion is generated by applying high-frequency power with power density greater than or equal to 0.59 W/cm2 and less than or equal to 1.18 W/cm2 to the stacked-layer film side under an atmosphere containing oxygen in which pressure is greater than or equal to 5 Pa and less than or equal to 15 Pa, the metal film is oxidized by the oxygen ion, and an oxide insulating film containing excess oxygen is formed by supplying oxygen to the oxide insulating film.
Claims16
A method for processing a stacked-layer film comprising a first oxide insulating film and a metal film over the first oxide insulating film, the method comprising the steps of:
- generating plasma containing an oxygen ion under an atmosphere containing oxygen;
- and
- irradiating the stacked-layer film with the oxygen ion so that a metal oxide film is formed by oxidizing the metal film and a second oxide insulating film containing excess oxygen is formed by supplying an oxygen atom to the first oxide insulating film,
- wherein the plasma is generated under a pressure greater than or equal to 5 Pa and less than or equal to 15 Pa, and with a power density greater than or equal to 0.59 W/cm2 and less than or equal to 1.18 W/cm2.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a stacked-layer film comprising a first oxide insulating film and a metal film over the first oxide insulating film;
- generating plasma containing an oxygen ion under an atmosphere containing oxygen;
- irradiating the stacked-layer film with the oxygen ion so that a metal oxide film is formed by oxidizing the metal film and a second oxide insulating film containing excess oxygen is formed by supplying an oxygen atom to the first oxide insulating film;
- forming an oxide semiconductor film over the metal oxide film;
- forming a gate insulating film over the oxide semiconductor film;
- and
- forming a gate electrode over the gate insulating film.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a stacked-layer film comprising a first oxide insulating film and a metal film over the first oxide insulating film;
- generating plasma containing an oxygen ion under an atmosphere containing oxygen;
- irradiating the stacked-layer film with the oxygen ion so that a metal oxide film is formed by oxidizing the metal film and a second oxide insulating film containing excess oxygen is formed by supplying an oxygen atom to the first oxide insulating film,
- forming a gate electrode over the metal oxide film;
- forming a gate insulating film over the gate electrode;
- and
- forming an oxide semiconductor film over the gate insulating film.
Dependencies are inferred from the claim text.