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US 8,999,771 B2Granted
Protection layer for halftone process of third metal
AssigneeApple Inc.
InventorsMing-Chin Hung, Byung Duk Yang, Kyung Wook Kim, Shih Chang Chang
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Abstract
A thin-film transistor having a protection layer for a planarization layer. The protection layer prevents reduction of the planarization layer during an ashing process, thereby preventing the formation of a steeply tapered via hole through the planarization layer. In this manner, the via hole may be coated with a conductive element that may serve as a conductive path between a common electrode and the drain of the transistor.
Claims10
A method for forming a thin-film transistor, comprising:
- forming a via in a planarization layer;
- depositing a protection layer over the planarization layer;
- depositing a common electrode layer over the protection layer;
- depositing a metal layer over the common electrode layer;
- etching a portion of the common electrode layer and the metal layer to form a remainder of the metal layer;
- depositing a passivation layer over a portion of the protection layer, a portion of the common electrode and the remainder of the metal layer;
- etching a portion of the passivation layer and a second portion of the protection layer;
- and
- coating the via with a conductive material.
6 more elements
A method for forming a thin-film transistor, comprising:
- forming a via in a planarization layer, the planarization layer overlaying a first passivation layer;
- depositing a protection layer over the planarization layer;
- depositing a metal layer over the protection layer;
- depositing a common electrode layer over the metal layer;
- etching a portion of the common electrode layer and the metal layer to form a remainder of the metal layer;
- depositing a second passivation layer over a portion of the protection layer, a portion of the common electrode and the remainder of the metal layer;
- and
- etching a portion of the second passivation layer, a second portion of the protection layer, and a portion of the first passivation layer to extend the via to a drain of the thin-film transistor.
5 more elements
Dependencies are inferred from the claim text.