Electronic fuse having an insulation layer

A method comprising:

• etching a dual damascene feature in a dielectric layer, the dual damascene feature comprising a first via opening, a second via opening, and a trench opening;
• forming a seed layer within the dual damascene feature, the seed layer comprising a conductive material;
• heating the seed layer causing the seed layer to reflow and fill the first via opening, fill the second via opening, and partially fill the trench opening to form a first via, a second via, and a fuse line extending from the first via to the second via along a bottom surface of the trench, respectively, wherein the seed layer no longer remains along an entire length of a sidewall of the trench opening;
• forming an insulating layer within the trench opening on top of and in direct contact with the fuse line;
• and
• forming a fill material on top of the insulating layer and substantially filling the trench opening.

A method comprising:

• etching a dual damascene feature in a dielectric layer, the dual damascene feature comprising a first via opening, a second via opening, and a trench opening;
• forming a seed layer within the dual damascene feature, the seed layer comprising a conductive material;
• removing an entirety of the seed layer from an entire length of a sidewall of the trench opening by heating the seed layer causing the seed layer to reflow and fill the first via opening and the second via opening to form a first via and a second via, wherein a remaining portion of the seed layer along a bottom surface of the trench opening forms a fuse line extending from the first via to the second via;
• forming an insulating layer within the trench opening on top of and in direct contact with the fuse line;
• and
• forming a fill material on top of the insulating layer and substantially filling the trench opening.