Method for manufacturing organic semiconductor element, and organic semiconductor element

A method for manufacturing an organic semiconductor element, comprising steps of:

• an organic semiconductor layer formation step of forming an organic semiconductor layer to cover a source electrode and a drain electrode;
• and
• a first dielectric layer and second dielectric layer formation step of using a dielectric layer laminated body in which a first dielectric layer is formed on a second-dielectric-layer-forming resin, and bonding the dielectric layer laminated body under pressure to arrange the first dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode, thereby forming a second dielectric layer on the organic semiconductor layer to cover the first dielectric layer,
• wherein the second dielectric layer has a contact portion contacting the organic semiconductor layer around the first dielectric layer, and
• a mixed layer in which the organic semiconductor layer and the second dielectric layer are mixed with each other is formed in an interface between the organic semiconductor layer and the second dielectric layer in the contact portion.

An organic semiconductor element comprising:

• a source electrode and a drain electrode;
• an organic semiconductor layer formed to cover the source electrode and the drain electrode;
• a first dielectric layer formed on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode;
• and
• a second dielectric layer formed on the organic semiconductor layer to cover the first dielectric layer,
• wherein the second dielectric layer has a contact portion contacting the organic semiconductor layer around the first dielectric layer, and
• a mixed layer in which the organic semiconductor layer and the second dielectric layer are mixed with each other is formed in an interface between the organic semiconductor layer and the second dielectric layer in the contact portion.