Phase-change memory device and fabrication method thereof

A method of fabricating a phase-change memory device, the method comprising:

• forming a word line over a semiconductor substrate;
• forming a diode layer over the word line;
• forming a phase-change layer over the diode layer;
• patterning the phase-change layer by etching, thereby forming a phase-change line in a line shape extending to a first direction;
• patterning the diode layer by etching, thereby forming a diode line in the same shape as the phase-change line;
• filling an insulating layer in a space formed through the patterning of the phase-change layer and the diode layer;
• depositing a conductive layer over the insulating layer and the phase-change line;
• patterning the conductive layer and the phase-change line by etching, thereby respectively forming a bit line and a phase-change line pattern in a line shape extending to a second direction perpendicular to the first direction;
• and
• etching the exposed diode layer using a bit line as a mask, thereby forming a line-shaped heating electrode and simultaneously confining a line-shaped diode.