Field effect transistor-based bio-sensor
AssigneeInternational Business Machines Corporation
InventorsAli Afzali-Ardakani, Christopher P. D'Emic, Ashish Jagtiani, Sufi Zafar
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Abstract
An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus.
Claims6
A method of forming a sensor, comprising:
- disposing a silicon sensing fin on a buried oxide layer of a substrate to form a channel of undoped silicon for providing a current flow between a source region and a drain region, each of the source region and the drain region comprising heavily doped silicon;
- depositing a dielectric layer and a metal oxide on one or more sides and a top of the sensing fin, the dielectric layer and the metal oxide forming a sensing surface on the silicon sensing fin;
- depositing a passive surface over the buried oxide layer and surrounding, adjacent to, or around the sensing fin, a material of the passive surface being different from a material of the sensing surface;
- modifying the sensing surface opposite the substrate with a compound bound to the sensing surface on the sensing fin and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target biomolecule;
- and
- causing a change in current flow between the source region and the drain region to sense the target biomolecule on the sensing surface.
Dependencies are inferred from the claim text.