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US 8,999,733 B2Granted
Method of forming RRAM structure
AssigneeNanya Technology Corporation
InventorsChun-I Hsieh, Chang-Rong Wu, Neng-Tai Shih
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Abstract
An RRAM includes a resistive layer including a dielectric layer and surplus oxygen ions or nitrogen ions from a treatment on the dielectric layer after the dielectric layer is formed. When the RRAM is applied with a voltage, the oxygen ions or nitrogen ions occupy vacancies in the dielectric layer to increase resistance of the resistive layer. When the RRAM is applied with another voltage, the oxygen ions or nitrogen ions are removed from the vacancies to lower the resistance of the resistive layer.
Claims5
A method of forming a resistive random-access memory (RRAM) structure, comprising:
- forming a bottom electrode;
- forming a dielectric barrier layer on the bottom electrode;
- forming a dielectric middle layer on the dielectric barrier layer;
- forming a dielectric screen layer on the dielectric middle layer, wherein the dielectric barrier layer, the dielectric middle layer, and the dielectric screen layer are successively formed on the bottom electrode to thereby constitute a tri-layer resistive stack;
- performing an oxygen treatment or a nitrogen treatment on the tri-layer resistive stack to introduce oxygen or nitrogen ions into the dielectric middle layer;
- and
- forming a top electrode on the dielectric screen layer, wherein the dielectric screen layer and the dielectric barrier layer respectively block diffusion of the oxygen ions or nitrogen ions to the top electrode and the bottom electrode.
4 more elements
Dependencies are inferred from the claim text.