Pattern forming method, chemical amplification resist composition and resist film

A chemical amplification resist composition, comprising:

• (A) a resin substantially insoluble in alkali;
• (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation;
• (C) a crosslinking agent;
• and
• (D) a solvent,
• wherein the resist composition further contains a hydrophobic resin (HR) containing a fluorine atom or a silicon atom.

A pattern forming method, comprising:

• (i) forming a film from a chemical amplification resist composition;
• (ii) exposing the film, so as to form an exposed film;
• and
• (iii) developing the exposed film by using an organic solvent-containing developer,
• wherein the step of exposing the film is an immersion exposure, and the chemical amplification resist composition contains:
• (A) a resin substantially insoluble in alkali;
• (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation;
• (C) a crosslinking agent;
• and
• (D) a solvent.

A chemical amplification resist composition, comprising:

• (A) a resin substantially insoluble in alkali;
• (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation;
• (C) a crosslinking agent;
• and
• (D) a solvent,
• wherein the resin (A) contains (a1) a repeating unit having an alcoholic hydroxyl group.

A chemical amplification resist composition, comprising:

• (A) a resin substantially insoluble in alkali;
• (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation;
• (C) a crosslinking agent;
• and
• (D) a solvent;
• wherein the resin (A) contains a repeating unit represented by formula (4) that is free of an acid decomposable group and a lactone structure, or represented by formula (5):
• wherein R5 represents a hydrocarbon group having neither a hydroxyl group nor a cyano group;
• Ra represents a hydrogen atom, a hydroxyl group, a halogen atom or an alkyl group, provided that Ra in formula (5) does not contain an acid-decomposable group or a lactone structure, and when a plurality of Ra's are present, the plurality of Ra's are the same or different;
• and
• n represents an integer of 0 to 2.

A chemical amplification resist composition, comprising:

• (A) a resin substantially insoluble in alkali;
• (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation;
• (C) a crosslinking agent;
• and
• (D) a solvent,
• wherein the resin (A) contains a repeating unit having a lactone structure.

A chemical amplification resist composition, comprising:

• (A) a resin substantially insoluble in alkali;
• (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation;
• (C) a crosslinking agent;
• and
• (D) a solvent;
• wherein:
• the crosslinking agent (C) contains at least one of a melamine-based crosslinking agent, a urea-base crosslinking agent, an alkylene urea-based crosslinking agent and a glycoluril-based crosslinking agent;
• the crosslinking agent (C) is a compound having two or more partial structures represented by the following formula (CLNM-1):
• wherein RNM1 represents a hydrogen atom, an alkyl group, a cycloalkyl group or an oxoalkyl group;
• and
• the resin (A) contains an aromatic group-containing repeating unit in amount of 5 mol % or less.

A chemical amplification resist composition, comprising:

• (A) a resin substantially insoluble in alkali;
• (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation;
• (C) a crosslinking agent;
• and
• (D) a solvent,
• wherein the crosslinking agent (C) is a phenol compound.

A chemical amplification resist composition, comprising:

• (A) a resin substantially insoluble in alkali;
• (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation;
• (C) a crosslinking agent;
• and
• (D) a solvent,
• wherein the crosslinking agent (C) is a compound represented by the following formula (EP2):
• wherein each of REP1 to REP3 independently represents a hydrogen atom, a halogen atom, an alkyl group or a cycloalkyl group, and the alkyl group and cycloalkyl group may have a substituent, and REP1 and REP2, or REP2 and REP3 may combine with each other to form a ring structure;
• QEP represents a single bond or an nEP-valent organic group, provided that REP1 to REP3 may combine not only with each other but also with QEP to form a ring structure;
• and
• nEP represents an integer of 2 or more, provided that when QEP is a single bond, nEP is 2.