Phase shift mask blank, method of manufacturing the same, and phase shift mask

A method of manufacturing a phase shift mask blank, the phase shift mask blank (1) being used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light, and (2) comprising transparent substrate;

• and
• a light-semitransmissive film on the transparent substrate;
• wherein the light-semitransmissive film is an incomplete nitride film containing mainly a transition metal (M), silicon (Si), and nitrogen (N),
• a content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 9%,
• the incomplete nitride film contains M—N bonds and M—Si bonds, and
• a content of the M—Si bonds is relatively greater than a content of the M—N bonds, the method comprising:
• a step of carrying out sputtering in an atmosphere containing a nitrogen gas to thereby form on the transparent substrate the light-semitransmissive film containing mainly a transition metal, silicon, and nitrogen,
• wherein a flow rate of the nitrogen gas in the atmosphere is less than a flow rate for completely nitriding the transition metal and the silicon.

A phase shift mask adapted to be applied with ArF excimer laser exposure light, comprising:

• a transparent substrate;
• and
• a light-semitransmissive film pattern on the transparent substrate;
• wherein the light-semitransmissive film pattern is made of an incomplete nitride film containing mainly a transition metal (M), silicon (Si), and nitrogen (N),
• a content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film pattern is less than 9%,
• the incomplete nitride film contains M-N bonds and M-Si bonds, and
• a content of the M-Si bonds is relatively greater than a content of the M-N bonds.