Oriented amorphous carbon film and process for forming the same
AssigneeKabushiki Kaisha Toyota Chuo Kenkyusho
InventorsTakashi Iseki, Yuka Yamada, Kazuyuki Nakanishi, Yasuhiro Ozawa, Shingo Ohta
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AssigneeKabushiki Kaisha Toyota Chuo Kenkyusho
InventorsTakashi Iseki, Yuka Yamada, Kazuyuki Nakanishi, Yasuhiro Ozawa, Shingo Ohta
Estimating the term…
The oriented amorphous carbon film contains C as a main component, 3 to 20 at. % of N, and more than 0 at. % and not more than 20 at. % of H, and when the total amount of the C is taken as 100 at. %, the amount of C having an sp2 hybrid orbital (Csp2) being not less than 70 at. % and less than 100 at. %, and (002) planes of graphite being oriented along a thickness direction. This film has a novel structure and exhibits a high electric conductivity. This film can be formed by DC plasma CVD method in which an electric discharge is generated by applying a voltage of not less than 1500 V to reaction gas including at least one kind of compound gas selected from gas of a carbocyclic compound containing Csp2 and gas of an N-containing heterocyclic compound containing Csp2, and nitrogen and/or silicon, and nitrogen gas.
An oriented amorphous carbon film containing carbon (C) as a main component, 3 to 20 atomic % of nitrogen (N), and more than 0 atomic % and not more than 20 atomic % of hydrogen (H), and when the total amount of the carbon is taken as 100 atomic %, the amount of carbon having an sp2 hybrid orbital being not less than 70 atomic % and less than 100 atomic %, and
Dependencies are inferred from the claim text.