# US 8,999,500 B2 · Semifinished products with a structured sinter-active surface and a process for their production > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,999,500 B2 - Document ID: US8999500B2 - Status: Granted - Kind: B2 - Application number: 12/377,714 - Filed: 2007-08-10 - Published: 2010-03-18 - Granted: 2015-04-07 - Earliest claimed: 2006-08-16 - Assignees: H.C. Starck GmbH - Applicants: Melanie Stenzel; Andreas Scharf; Helmut Haas; Holger Brumm; Timo Langetepe; Christoph Schnitter - Inventors: Melanie Stenzel; Andreas Scharf; Helmut Haas; Holger Brumm; Timo Langetepe; Christoph Schnitter - Web page: https://patentgrep.com/patent/US8999500B2 ## CPC - H01G 9/042: characterised by the material (H01G11/22 takes precedence) - H01G 9/052: Sintered electrodes - Y10T 428/264: Up to 3 mils - Y10T 428/265: 1 mil or less - Y10T 428/31: Surface property or characteristic of web, sheet or block - H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10) - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract The invention comprises semifinished products with a structured surface, the semifinished product comprising an oxidized and subsequently re-reduced surface containing at least one refractory metal, and also a process for their production and their use for producing high-capacitance components. ## Claims ### Claim 1 A semifinished product comprising a structured sinter-active surface, the surface being oxidized and subsequently re-reduced and including at least one refractory metal wherein a ratio of the microscopic surface area to the macroscopic surface area of the oxidized and re-reduced surface is in the range of 10 to 100,000, and wherein the oxidation of the structured sinter-active surface is thermal or anodic. ### Claim 2 (depends on 1) The semifinished product according to claim 1, wherein the structured sinter-active surface forms an anodic conductor and comprises titanium, molybdenum, tungsten, niobium, tantalum or an alloy containing one or more of these metals. ### Claim 3 (depends on 1) The semifinished product according to claim 1, wherein the structured sinter-active surface is doped with at least one of metals, metal ions, and one or more of the elements phosphorus, nitrogen, silicon or boron. ### Claim 4 (depends on 1) The semifinished product according to claim 1, wherein the structured surface is between 50 nm and 50 μm thick. ### Claim 5 (depends on 1) The semifinished product according to claim 1, wherein the structured surface has a thickness between about 50 nm and 10 μm and a capacitance between about 1 μF and 50 μF per cm2 of base area when oxidized with a forming voltage of about 20 V. ### Claim 6 (depends on 1) The semifinished product according to claim 1, wherein a high-capacitance materials is coated onto the surface by sintering. ### Claim 7 A high-capacitance component comprising a semifinished product, the semifinished product having a structured sinter-active surface, wherein the surface is oxidized and subsequently re-reduced and includes at least one refractory metal wherein a ratio of the microscopic surface area to the macroscopic surface area of the oxidized and re-reduced surface is in the range of 10 to 100,000, and wherein the oxidation of the structured sinter-active surface is thermal or anodic. ### Claim 8 (depends on 7) The component according to claim 7, further comprising a high-capacitance material sintered onto the surface. ### Claim 9 (depends on 8) The component according to claim 8, wherein the high-capacitance material is one of a high-capacitance powder and a high-capacitance semifinished product. ### Claim 10 (depends on 8) The component according to claim 8, wherein the high-capacitance material contains a refractory metal. ### Claim 11 (depends on 1) The semifinished product according to claim 1, wherein the surface of the product has a thickness between 10 nm and 1 mm. ### Claim 12 (depends on 7) The component according to claim 7, wherein the surface has a thickness between 10 nm and 1 mm. ### Claim 13 (depends on 1) The semifinished product according to claim 1, wherein the surface of the product has a thickness between 100 nm and 800 nm. ### Claim 14 (depends on 2) The semifinished product according to claim 2, wherein the structured sinter-active surface is doped with phosphorus. ### Claim 15 (depends on 2) The semifinished product according to claim 2, wherein the structured sinter-active surface is doped with nitrogen. ### Claim 16 (depends on 2) The semifinished product according to claim 2, wherein the structured sinter-active surface is doped with silicon. ### Claim 17 (depends on 2) The semifinished product according to claim 2, wherein the structured sinter-active surface is doped with boron.