Component of substrate processing apparatus and method for forming a film thereon
AssigneeTokyo Electron Limited
InventorKoji Mitsuhashi
Life of this patent
Estimating the term…
Abstract
A component of a substrate processing apparatus that performs plasma processing on a substrate includes a base mainly formed of an aluminum alloy containing silicon. A film is formed on the surface of the base by an anodic oxidation process which includes connecting the component to an anode of a power supply and immersing the component in a solution mainly formed of an organic acid. The film is impregnated with ethyl silicate.
Claims20
A component of a substrate processing apparatus that performs plasma processing on a substrate, the component comprising:
- an aluminum base mainly formed of an aluminum alloy containing silicon;
- and
- an alumite film having heat resistance to heat applied when the plasma processing is performed and including a barrier layer and a porous layer formed on the barrier layer such that the porous layer has a plurality of pores each having an opening passage, the alumite film being formed on a surface of the aluminum base by an anodic oxidation process which includes connecting the aluminum base to an anode of a power supply and immersing the aluminum base in a solution mainly formed of an organic acid,
- wherein the alumite film is impregnated with ethyl silicate without filling or sealing the opening passages of the plurality of pores formed in the porous layer so that the plurality of pores have opening passages which are not sealed by the ethyl silicate, and
- wherein silicon in the ethyl silicate is dispersed into the alumite film and remains therein as silicon granules.
A component of a substrate processing apparatus that performs plasma processing on a substrate, the component comprising:
- an aluminum base mainly formed of an aluminum alloy containing silicon;
- and
- an alumite film having heat resistance to heat applied when the plasma processing is performed, the alumite film being disposed on a surface of the aluminum base and having oxide crystal columns oriented radially from the silicon serving as a nucleus, wherein the alumite film includes a plurality of pores each having an opening passage,
- wherein the alumite film is impregnated with ethyl silicate without filling or sealing the opening passages of the plurality of pores formed in the alumite film so that the plurality of pores have opening passages therein which are not sealed by the ethyl silicate, and
- wherein silicon in the ethyl silicate is dispersed into the alumite film and remains therein as silicon granules.
Dependencies are inferred from the claim text.