# US 8,999,440 B2 · Method of manufacturing a structure comprising a graphene sheet provided with metal pins, structure thus obtained and use thereof

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- Number: US 8,999,440 B2
- Document ID: US8999440B2
- Status: Granted
- Kind: B2
- Application number: 13/187,385
- Filed: 2011-07-20
- Published: 2012-02-16
- Granted: 2015-04-07
- Earliest claimed: 2010-07-21
- Assignees: Centre National De La Recherche Scientifique; Commissariat A L'energie Atomique Et Aux Energies Alternatives
- Applicants: Aziz Zenasni; Johann Coraux; Valentina Ivanova-Hristova; Stefan Landis; Carole Pernel
- Inventors: Aziz Zenasni; Johann Coraux; Valentina Ivanova-Hristova; Stefan Landis; Carole Pernel
- Web page: https://patentgrep.com/patent/US8999440B2

## CPC

- B81C 1/00126: {Static structures not provided for in groups B81C1/00031 - B81C1/00119}
- H01B 1/04: mainly consisting of carbon-silicon compounds, carbon or silicon
- H01M 4/139: Processes of manufacture
- H01M 4/583: Carbonaceous material, e.g. graphite-intercalation compounds or CFx
- H01M 10/0436: {Small-sized flat cells or batteries for portable equipment}
- H10D 62/882: {Graphene}
- Y02E 60/10: Energy storage using batteries
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- Y10T 29/49815: Disassembling
- Y10T 428/24752: Laterally noncoextensive components
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- H01M: PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A structure, method of manufacturing a structure, and methods of using a structure including a graphene sheet is disclosed. According to one aspect, the grapheme sheet is provided, on one of the faces of the structure, with a plurality of metal pins. The metal pins being separated from one another by a dielectric medium chosen from air and dielectric materials. The method including the steps of synthesizing, by vapor phase catalytic growth, the graphene sheet on a plurality of metal pins that are disposed on a membrane made from dielectric material or integrated in the membrane. The growth being catalyzed by the metal pins. According to some aspects, the membrane is removed from the structure. The structure may be used, for example, in the fields of micro- and nanoelectronics, micro- and nanoelectronic engineering, spintronics, photovoltaics, light emitting diode display, or the like.

## Claims

### Claim 1

A method of manufacturing a structure comprising a graphene sheet having a first face and a second face, the first face being provided with a plurality of metal pins, the metal pins being separated from one another by a dielectric medium selected from air and dielectric materials, said method comprising:
synthesizing, by vapor phase catalytic growth, the graphene sheet on a plurality of metal pins, the metal pins being disposed on a membrane made from a dielectric material or integrated in the membrane, wherein the catalytic growth is catalysed by the metal pins, wherein the metal pins are formed of a metal or a mixture of metals, the metal(s) having a lattice parameter within about 2% of a lattice parameter of the graphene.

### Claim 2 (depends on 1)

The method of claim 1, wherein the vapor phase catalytic growth comprises chemical vapor deposition.

### Claim 3 (depends on 2)

The method of claim 2, wherein the chemical vapor deposition is carried out with a gaseous flow comprising at least one hydrocarbon at a temperature ranging from about 200° C. to about 2000° C. and at a pressure ranging from ultrahigh vacuum pressure to atmospheric pressure.

### Claim 4 (depends on 2)

The method of claim 2, in which the chemical vapor deposition is carried out with a gaseous flow comprising at least one C1 to C3 hydrocarbon at a temperature ranging from about 800° C. to about 1200° C. and at a pressure less than atmospheric pressure and greater than 10−6 Pa.

### Claim 5 (depends on 1)

The method of claim 1, wherein the metal pins are formed of a metal or a mixture of metals selected from the group consisting of nickel, copper, cobalt, ruthenium, palladium, iridium and platinum.

### Claim 6 (depends on 5)

The method of claim 5, wherein the metal pins are formed of nickel.

### Claim 7 (depends on 1)

The method of claim 1, wherein the metal pins form a lattice.

### Claim 8 (depends on 7)

The method of claim 7, wherein the lattice has a regular pitch.

### Claim 9 (depends on 7)

The method of claim 7, wherein a length of the metal pins measured in a direction parallel to a plane of the membrane made from the dielectric material is greater than 1 nm and less than 1 μm.

### Claim 10 (depends on 7)

The method of claim 7, wherein two adjacent metal pins are separated from one another by a distance equal to a distance that is greater than 1 nm and less than 1 μm.

### Claim 11 (depends on 1)

The method of claim 1, further comprising producing the metal pins, wherein producing the metal pins comprises filling openings in a support with a metal or metal alloy.

### Claim 12 (depends on 11)

The method of claim 11, wherein the openings in the support form a lattice.

### Claim 13 (depends on 12)

The method of claim 12, wherein the lattice has a regular pitch.

### Claim 14 (depends on 11)

The method of claim 11, wherein a length of the openings in the support measured in a direction parallel to a plane of the support is greater than 1 nm and less than 1 μm.

### Claim 15 (depends on 11)

The method of claim 11, wherein two adjacent openings in the support are separated the one from another by a distance equal to a distance that is greater than 1 nm and less than 1 μm.

### Claim 16 (depends on 11)

The method of claim 11, wherein the support is formed by the membrane made from the dielectric material, and wherein the openings in the support correspond to pores that comprise the membrane before filling of said openings by the metal or metal alloy, the pores forming a lattice and having a length measured in a direction parallel to a plane of said membrane which is equal to a length that is greater than 1 nm and less than 1 μm.

### Claim 17 (depends on 16)

The method according to claim 16, wherein the membrane is formed of a material selected from the group consisting of alumina, silica, a material having a formula SivOwCyHz or SivOwCxNyHz in which v, w, x, y and z are nonzero coefficients, a polymer and a sequenced copolymer.

### Claim 18 (depends on 1)

The method according to claim 1, further comprising removing the membrane.