In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor element
AssigneeIdemitsu Kosan Co., Ltd.
InventorsMasayuki Itose, Mami Nishimura, Masashi Kasami, Koki Yano
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Abstract
An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): 0.10≦In/(In+Ga+Sn)≦0.60 (1) 0.10≦Ga/(In+Ga+Sn)≦0.55 (2) 0.0001<Sn/(In+Ga+Sn)≦0.60 (3).
Claims10
An oxide sintered body comprising indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3), wherein the content of zinc element (Zn) is 10000 ppm or less:
- 0.10≦In/(In+Ga+Sn)≦0.60 (1)
- 0.30<Ga/(In+Ga+Sn)≦0.55 (2)
- 0.0001<Sn/(In+Ga+Sn)≦0.30 (3).
An oxide semiconductor film comprising indium element (In), gallium element (Ga) and tin element (Sn) in an atomic ratio represented by the following formulas (1) to (3) and having an electron carrier density of 1014 cm−3 or more and 1019 cm−3or less, wherein the content of zinc element (Zn) is 10000 ppm or less:
- 0.10≦In/(In+Ga+Sn)0.60 (1)
- 0.30<Ga/(In+Ga+Sn)≦0.55 (2)
- 0.0001<Sn/(ln+Ga+Sn)≦0 0.30 (3).
Dependencies are inferred from the claim text.