Method for providing vias
AssigneeLam Research Corporation
InventorsMing-Shu Kuo, Siyi Li, Yifeng Zhou, Ratndeep Srivastava, Tae Won Kim, Gowri Kamarthy
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Abstract
A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H2. A plasma is formed from the treatment gas. The patterned via holes are rounded to form patterned rounded via holes by exposing the patterned via holes to the plasma. The flow of the treatment gas is stopped. The plurality of patterned rounded via holes are transferred into the etch layer.
Claims13
A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes, comprising:
- treating the patterned organic mask, comprising:
- flowing a treatment gas comprising H2;
- forming a plasma from the treatment gas;
- rounding the patterned via holes to form patterned rounded via holes by exposing the patterned via holes to the plasma;
- and
- stopping the flow of the treatment gas;
- and
- transferring the plurality of patterned rounded via holes into the etch layer, comprising:
- opening features in a silicon containing mask layer below the patterned organic mask using the rounded via holes in the patterned organic mask, comprising:
- providing an opening gas with an etchant component and polymerizing component;
- forming the opening gas into a plasma, which etches features through the silicon containing mask layer with a second critical dimension, which is less than half a first critical dimension, forming a pattern in the silicon containing mask layer;
- transferring the pattern of the silicon containing mask layer to an organic underlayer disposed below the silicon containing mask layer;
- and
- transferring a pattern from the organic underlayer to the etch layer,
- wherein the forming a plasma uses a bias between 0 to 100 volts.
A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes, comprising:
- treating the patterned organic mask, comprising:
- flowing a treatment gas comprising H2;
- forming a plasma from the treatment gas;
- rounding the patterned via holes to form patterned rounded via holes by exposing the patterned via holes to the plasma;
- and
- stopping the flow of the treatment gas;
- and
- transferring the plurality of patterned rounded via holes into the etch layer, comprising:
- opening features in a silicon containing mask layer below the patterned organic mask using the rounded vias holes in the patterned organic mask, comprising:
- providing an opening gas with an etchant component and polymerizing component;
- forming the opening gas into a plasma, which etches features through the silicon containing mask layer with a second critical dimension, which is less than half a first critical dimension, forming a pattern in the silicon containing mask layer;
- transferring the pattern of the silicon containing mask layer to an organic underlayer disposed below the silicon containing mask layer;
- and
- transferring a pattern from the organic underlayer to the etch layer.
Dependencies are inferred from the claim text.