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US 8,999,118 B2Granted
Formation of non-magnetic grooves
AssigneeSeagate Technology LLC
InventorsIbro Tabakovic, Steve Riemer, Jie Gong, Mark Thomas Kief, Ming Sun
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Abstract
A method is disclosed for defining discrete magnetic and non-magnetic regions on the magnetic film layer of a storage media substrate. The method applies anodic oxidation of a cobalt-containing magnetic film layer to remove cobalt, followed by controlled deposition of a non-magnetic matrix into the regions where the cobalt has been removed. Deposition may either be electrodeposition, collimated vacuum deposition, or other methods depending upon the composition of the non-magnetic matrix being deposited. The method may be performed in a single electrochemical cell.
Claims20
A method comprising:
- selectively removing cobalt from one or more of portions of a cobalt-containing magnetic film layer on a surface of a substrate using a first electrolyte solution, the substrate comprising a resist layer over the cobalt-containing magnetic film, the resist layer comprising one or more pattern features exposing one or more of the portions of the cobalt-containing magnetic film, wherein the removal of cobalt forms a groove in the cobalt-containing magnetic film layer;
- depositing a non-magnetic matrix in the groove using second electrolyte solution comprising a substantially similar electrolytic composition as the first electrolyte solution used for the selective removal of cobalt;
- controlling the rate of deposition of the non-magnetic matrix through application of an amount of current sufficient to adjust an electric potential of the second electrolyte solution;
- and controlling the rate of selective removal of cobalt through application of an amount of current sufficient to adjust an electric potential of the first electrolyte solution.
1 more element
An apparatus comprising:
- an electrochemical cell configured to selectively remove cobalt from an exposed portion of a cobalt-containing magnetic film of a substrate using a first electrolyte solution, the substrate comprising a resist layer over the cobalt-containing magnetic film, the resist layer comprising one or more pattern features exposing one or more portions of the cobalt-containing magnetic film, wherein the removal of cobalt forms a groove in the cobalt-containing magnetic film;
- and means for depositing a non-magnetic matrix in the groove using a second electrolyte solution comprising a substantially similar electrolytic composition as the first electrolyte solution used for the selective removal of cobalt, wherein the electrochemical cell is further configured to:
- control the rate of deposition of the non-magnetic matrix through application of an amount of current sufficient to adjust an electric potential of the second electrolyte solution, and control the rate of selective removal of cobalt through application of an amount of current sufficient to adjust an electric potential of the first electrolyte solution.
An apparatus comprising:
- a first electrochemical cell configured to selectively remove cobalt from an exposed portion of a cobalt-containing magnetic film of a substrate using a first electrolyte solution, the substrate comprising a resist layer over the cobalt-containing magnetic film, the resist layer comprising one or more pattern features exposing one or more portions of the cobalt-containing magnetic film, wherein the removal of cobalt forms a groove in the cobalt-containing magnetic film;
- and a second electrochemical cell operable to deposit a non-magnetic matrix the groove using a second electrolyte solution comprising a substantially similar electrolytic composition as the first electrolyte solution used for the selective removal of cobalt, wherein the first electrochemical cell is configured to control the rate of deposition of the non-magnetic matrix through application of an amount of current sufficient to adjust an electric potential of the second electrolyte solution, and wherein the second electrochemical cell is configured to control the rate of selective removal of cobalt through application of an amount of current sufficient to adjust an electric potential of the first electrolyte solution.
An apparatus comprising:
- an electrochemical cell configured to selectively remove cobalt from an exposed portion of a cobalt-containing magnetic film of a substrate using a first electrolyte solution, the substrate comprising a resist layer over the cobalt-containing magnetic film, the resist layer comprising one or more pattern features exposing one or more portions of the cobalt-containing magnetic film, wherein the removal of cobalt forms a groove in the cobalt-containing magnetic film;
- and means for depositing a non-magnetic matrix in one or more of the grooves in the cobalt-containing magnetic film layer groove using a second electrolyte solution comprising a substantially similar electrolytic composition as the first electrolyte solution used for the selective removal of cobalt;
- and means for depositing a carbon overcoat (COC) over one or more of the grooves in the cobalt-containing magnetic film layer, wherein the second electrolyte solution comprises a H2PtCl6 solution and the electrochemical cell is configured to control the rate of deposition of the non-magnetic matrix through application of an amount of current sufficient to adjust an electric potential of the electrolyte solution, and wherein the electrochemical cell is configured to control the rate of selective removal of cobalt through application of an amount of current sufficient to adjust an electric potential of the first electrolyte solution.
Dependencies are inferred from the claim text.