Laser ashing of polyimide for semiconductor manufacturing

A method for laser ashing of polyimide for a semiconductor manufacturing process using a structure, the structure comprising a supporting material attached to a semiconductor chip by a polyimide glue, wherein the method comprises:

• releasing, using a release laser, the supporting material from the polyimide glue, such that the polyimide glue remains on the semiconductor chip;
• following the releasing, performing a first plasma cleaning of the semiconductor chip, wherein carbon debris and the polyimide glue remaining on the semiconductor chip are removed;
• following the first plasma cleaning, performing a laser ashing, wherein an ashing laser is an ultraviolet (UV) laser having a wavelength from about 10 nanometers (nm) to about 400 nm and a fluence from about 100 millijoules per centimeter squared (mJ/cm2) to about 300 mJ/cm2;
• and
• following the laser ashing, performing a second plasma cleaning of the semiconductor chip, wherein carbon debris from the laser ashing is removed.