Systems, methods and apparatus for separate plasma source control

A plasma processing system comprising:

• a plurality of ring plasma chambers disposed on a processing chamber top opposite from a processing chamber, each one of the plurality of ring plasma chambers having a ring shape oriented parallel to the processing chamber top, each one of the plurality of ring plasma chambers not passing through the processing chamber top, wherein each one of the plurality of plasma chambers includes corresponding plurality of plasma chamber outlets coupling each one of the plurality the plasma chambers to the process chamber, each one of the plurality of plasma chamber outlets passing through the process chamber top each one of the plurality of plasma chamber outlets including a plasma restriction sized to prevent plasma from passing from the plasma chamber to the processing chamber;
• a plurality of primary windings, wherein each one of the plurality of primary windings is wrapped around an exterior one of the plurality of the ring plasma chambers;
• a plurality of ferrites disposed in a plurality of groups, wherein each one of the plurality of the ring plasma chamber passes through a respective one of the plurality of groups of the ferrites;
• and
• a control system coupled to each of the plurality of ring plasma chambers, the control system including:
• at least one process monitoring sensor;
• and
• logic for delivering a process gas into each one of the plurality of ring plasma chambers;
• logic for applying a primary current to a respective primary winding around a corresponding exterior of each one of the plurality of ring plasma chambers;
• logic for generating magnetic field in each of the primary windings;
• logic for concentrating the magnetic field with the plurality of ferrites, wherein the ferrites are in a plurality of groups around the circumference of each of the plurality of ring plasma chambers;
• logic for inducing a secondary current in the process gas in each of the plurality of ring plasma chambers;
• logic for generating a plasma in the process gas in each of the plurality of ring plasma chambers with the secondary current;
• logic for receiving a process feedback signal from at the least one process monitoring sensor;
• and
• logic for adjusting at least one set point.

A plasma system for processing a substrate, comprising:

• a process chamber having:
• a base;
• a plurality of sidewalls;
• a substrate support proximate to the base;
• and
• a chamber top interfaced with the sidewalls to enclose the process chamber;
• a plurality of ferrites disposed over the chamber top in a plurality of groups-distributed over regions of the substrate support, the regions extending at least between an exterior portion of the substrate support and a center portion of the substrate support wherein the plurality of ferrites are grouped in a plurality of groups of one or more ferrites;
• a plurality of primary windings, wherein each one of the plurality of primary windings is wrapped around an exterior one of the plurality of groups of ferrites;
• and
• a plurality of ring plasma chambers disposed on the chamber top opposite from the processing chamber, each one of the plurality of ring plasma chambers having a ring shape oriented parallel to the chamber top, wherein each one of the plurality of the ring plasma chamber passes through a respective one of the plurality of groups of the ferrites, each one of the plurality of ring plasma chambers not passing through the processing chamber top, wherein each one of the plurality of plasma chambers includes corresponding plurality of plasma chamber outlets coupling each one of the plurality the plasma chambers to the process chamber, each one of the plurality of plasma chamber outlets passing through the process chamber top each one of the plurality of plasma chamber outlets including a plasma restriction sized to prevent plasma from passing from the plasma chamber to the processing chamber.