Process for bonding two substrates
AssigneeSoitec
InventorsGweltaz Gaudin, Fabrice Lallement, Cyrille Colnat, Pascale Giard
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Abstract
The invention relates to a method for bonding two substrates, in particular, two semiconductor substrates that, in order to be able to improve the reliability of the process, provides the step of providing a gaseous flow over the bonding surfaces of the substrates. The gaseous flow is preferably a laminar flow that is essentially parallel to the bonding surfaces of the substrates, and has a temperature in a range of from room temperature up to 100° C.
Claims16
A method for reducing bonding defects when bonding two substrates to one another, which comprises, prior to bonding, providing a gaseous flow over bonding surfaces between the substrates until the substrates come into contact, wherein providing the gaseous flow comprises using a gas inflow device and a gas outflow device arranged and configured such that the gaseous flow is a laminar flow that is essentially parallel to the bonding surfaces of the substrates, and the gaseous flow has a temperature in a range of from room temperature up to 100° C.;
- and thereafter bonding the substrates together to reduce defects compared to bonding substrates without the prior gaseous flow over the bonding surfaces.
A method for reducing bonding defects when bonding two semiconductor substrates to one another, which comprises, prior to bonding, providing a gaseous flow over bonding surfaces between the substrates until the substrates come into contact, wherein providing the gaseous flow comprises using a gas inflow device and a gas outflow device arranged and configured such that the gaseous flow is a laminar flow that is essentially parallel to the bonding surfaces of the substrates, the gaseous flow has a temperature in a range of from room temperature up to 100° C., and the gaseous flow treatment is carried out over a time period of from several seconds up to several minutes;
- and thereafter bonding the substrates together by bringing the substrates into close contact and locally applying a pressure to create a bonding front which spreads between the substrates with the gaseous flow stopped when the substrates touch each other to thereby reduce defects compared to bonding substrates without the prior gaseous flow over the bonding surfaces.
Dependencies are inferred from the claim text.