Back to results
US 8,999,061 B2Granted
Method for producing silicon epitaxial wafer
AssigneeSumco Corporation
InventorsMasayuki Ishibashi, Tomonori Miura
Life of this patent
Estimating the term…
Abstract
The method for producing a silicon epitaxial wafer according to the present invention has: a growth step G at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step E at which, before the growth step G, both main surfaces of the silicon single crystal substrate are subjected to rough polishing simultaneously; and a second polishing step H at which, after the growth step G, the both main surfaces of the silicon single crystal substrate are subjected to finish polishing simultaneously.
Claims9
A method for producing a silicon epitaxial wafer, comprising:
- a growth step at which an epitaxial layer is grown on a silicon single crystal substrate;
- a first polishing step at which, before the growth step, both main surfaces of the silicon single crystal substrate are subjected to rough polishing performed by pressing force simultaneously under a condition of no abrasive grains;
- and
- a second polishing step at which, after the growth step, the both main surfaces of the silicon single crystal substrate are subjected to finish polishing simultaneously,
- wherein the first polishing step is the only polishing step performed in which the both main surfaces of the silicon single crystal substrate are subjected to the rough polishing performed by the pressing force simultaneously under the condition of no abrasive grains, before the growth step, and a polishing amount of the polishing performed by the pressing force under the condition of no abrasive grains in the first polishing step is 5 to 30 μm.
2 more elements
Dependencies are inferred from the claim text.