Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsBoris N. Feigelson, Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr.
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Abstract
Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
Claims9
A low pressure and low temperature process for growing gallium nitride whiskers from solution, comprising:
- (a) charging a reaction vessel with a gallium composition comprising gallium mixed with at least one of bismuth and antimony, a Group IA element material, and gallium nitride;
- (b) placing the charged reaction and vessel into a chamber;
- (c) applying a nitrogen gas pressure of 0.1 to 20 MPa to the reaction vessel;
- (d) applying a temperature of between 700 to 900° C. to the reaction vessel (i) to cause the gallium nitride from the gallium nitride and/or nitrogen to dissolve in the solvent comprising gallium, at least one of bismuth and antimony, and the Group IA element;
- (ii) to form a solution;
- and (iii) to precipitate gallium nitride out of the solution exclusively in the form of gallium nitride whiskers.
Dependencies are inferred from the claim text.