Process for producing a nitride single crystal and apparatus therefor
AssigneesNGK Insulators, Ltd., Osaka University
InventorsKatsuhiro Imai, Makoto Iwai, Takanao Shimodaira, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura
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Abstract
A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.
Claims25
A method for producing a nitride single crystal using a solution comprising a flux and a raw material, the method using a growth apparatus comprising:
- a plurality of crucibles each for containing the solution,
- a heating element for heating the crucibles, and
- a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas;
- and
- the method comprising the step of putting one seed crystal in each of the crucibles to grow the nitride single crystal on the seed crystal,
- orienting the pressure vessel so that a central axis thereof is inclined at an angle relative to the vertical axis, and
- revolving the pressure vessel around the vertical axis while maintaining said central axis of the pressure vessel at said angle,
- wherein the pressure vessel is not rotated around said central axis and the solutions in the crucibles are simultaneously stirred by the inclined, revolving movement of the pressure vessel during the growth of the nitride single crystal, and the one seed crystal in each of the crucibles is immersed in the solution contained in the crucible during the growth of the nitride single crystal.
An apparatus for producing a nitride single crystal using a solution comprising a flux and a raw material, the apparatus comprising:
- a plurality of crucibles each for containing the solution and one seed crystal;
- a heating element for heating the crucibles;
- and
- a pressure vessel for containing at least the crucibles and the heating element and filling an atmosphere comprising at least nitrogen gas,
- orienting the pressure vessel so that a central axis thereof is inclined at an angle relative to the vertical axis, and
- revolving the pressure vessel around the vertical axis while maintaining said central axis of the pressure vessel at said angle,
- wherein the pressure vessel is not rotated around said central axis and the solutions in the crucibles are simultaneously stirred by moving the inclined, revolving pressure vessel during the growth of the nitride single crystal, and the one seed crystal in each crucible is immersed in the solution contained in the crucible during the growth of the nitride single crystal.
Dependencies are inferred from the claim text.