In-situ boron doped PDC element
AssigneeNational Oilwell DHT, L.P.
InventorsJiinjen Albert Sue, Harold Sreshta
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Abstract
A polycrystalline diamond compact formed in an in-situ boron-doped process. The in-situ boron-doped process includes consolidating a mixture of diamond crystals and boron-containing alloy via liquid diffusion of boron into diamond crystals at a pressure greater than 5 Gpa and at a temperature greater than the melting temperature of the boron-containing alloy, typically less than about 1450° C.
Claims21
A polycrystalline diamond compact, comprising:
- a layer of polycrystalline diamond integrally formed in a high-temperature, high-pressure in-situ boron-doped process, the layer comprising a generally uniform mixture of diamond crystals and boron-containing alloy formed of Ni—, Co— or Fe—, and boron powder, said boron-containing alloy having a melting temperature between about 960° C. and about 1200° C., said mixture being consolidated via liquid diffusion of boron into the diamond crystals at a pressure between about 5 Gpa and about 7 Gpa and at a temperature greater than 950° C. and less than 1450° C.
An earth boring drill bit, comprising:
- a polycrystalline diamond cutting element with a layer of polycrystalline diamond integrally formed in a high-temperature, high-pressure in-situ boron-doped process, the layer comprising an in-situ boron-doped polycrystalline diamond compact comprising a generally uniform mixture of diamond crystals and boron-containing alloy formed of Ni—, Co— or Fe—, and boron powder, said boron-containing alloy having a melting temperature between about 960° C. and about 1200° C., said mixture being consolidated via liquid diffusion of boron into the diamond crystals at a pressure greater than 5 Gpa and less than 7 Gpa and at a temperature greater than 950° C. and less than 1450° C.
A method for making an in-situ boron-doped polycrystalline diamond compact, comprising:
- forming a layer of polycrystalline diamond integrally in a high-temperature, high-pressure in-situ boron-doped process comprising in-situ boron-doped polycrystalline diamond compact by consolidating a generally uniform mixture of diamond crystals and boron-containing alloy formed of Ni—, Co— or Fe—, and boron powder, said boron-containing alloy having a melting temperature between about 960° C. and about 1200° C., said mixture formed via liquid diffusion of boron into diamond crystals at a pressure greater than 5 Gpa and less than 7 Gpa and at a temperature greater than 950° C. and less than 1195° C.
A polycrystalline diamond cutting element, comprising:
- a preform cutting element in a fixed cutter rotary drill bit, the preform cutting element having a body in a form of a circular tablet with a front facing table of polycrystalline diamond that is integrally formed with a substrate of less hard material and bonded on a generally cylindrical carrier, the preformed cutting element formed in a high-temperature, high-pressure in-situ boron-doped process, the tablet comprising an in-situ boron-doped formed polycrystalline diamond compact comprising a generally uniform mixture of diamond crystals and boron-containing alloy formed of Ni—, Co— or Fe—, and boron powder, said boron-containing alloy having a melting temperature between about 960° C. and about 1200° C., said mixture consolidated via liquid diffusion of boron into diamond crystals at a pressure between about 5 Gpa and about 7 Gpa and at a temperature greater than 950° C. and less than 1450° C.
Dependencies are inferred from the claim text.