Method for manufacturing acoustic wave device
AssigneeMurata Manufacturing Co., Ltd.
InventorsToshiyuki Fuyutsume, Taro Nishino, Hisashi Yamazaki, Noboru Tamura, Nakaba Ichikawa, Masaki Aruga
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AssigneeMurata Manufacturing Co., Ltd.
InventorsToshiyuki Fuyutsume, Taro Nishino, Hisashi Yamazaki, Noboru Tamura, Nakaba Ichikawa, Masaki Aruga
Estimating the term…
Provided is a method for manufacturing an acoustic wave device that has an excellent temperature coefficient of frequency (TCF) and high accuracy of IDT pattern forming and is capable of resisting high temperature processing of 200 degrees or more. The method for manufacturing an acoustic wave device according to the present invention includes forming an IDT (2) on a principal surface (1a) of a piezoelectric substrate (1), and forming a film by thermal spraying a material (3) having a smaller linear thermal expansion coefficient than the piezoelectric substrate onto an opposite principal surface (1b) of the piezoelectric substrate (1) where the IDT (2) is formed.
A method for manufacturing an acoustic wave device, comprising the steps of:
Dependencies are inferred from the claim text.