RF amplifier
AssigneeRockwell Collins, Inc.
InventorsRussell D. Wyse, Michael L. Hageman, Max S. Hawkins, Jr.
Life of this patent
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Abstract
An RF amplifier suitable for use in an RF transceiver has a circuit including a first transistor pair with the collector of each coupled to one of the two differential output nodes and a common base. A pair of Ft doublers is provided with the emitter of each Ft doubler coupled to one of the transistors in the first transistor pair. Each Ft doubler has a common emitter and a base coupled to one of the differential input nodes. As such, the first transistor pair and the Ft doubler pair are cascode-coupled to provide a wide bandwidth, high gain, and high input impedance RF amplifier.
Claims17
An RF amplifier, comprising:
- a first transistor pair, each transistor having an emitter, a collector coupled to one of two differential output nodes, and a common base;
- and
- an Ft doubler pair, each Ft doubler having a collector coupled to the emitter of one of the first transistor pairs, a common emitter, and a base coupled to one of two differential input nodes;
- a pair of first impedance networks, wherein each impedance network is coupled in series with the collector of one of the transistors in the first transistor pair, and wherein the pair of first impedance networks are sized to substantially cancel a parasitic capacitance that arises between the base and the collector of each Ft doubler;
- and
- a second impedance network coupled between the two differential input nodes.
An RF amplifier, comprising:
- a first transistor pair, each transistor having an emitter, a collector coupled to one of two differential output nodes, and a common base;
- and
- an Ft doubler pair, each Ft doubler having a collector coupled to the emitter of one of the first transistor pairs, a common emitter, and a base coupled to one of two differential input nodes, wherein each Ft doubler further comprises:
- a second transistor having a base coupled to one of the differential input nodes, a collector, and an emitter;
- a third transistor having a collector coupled to the emitter of the second transistor, a base coupled to the collector of the third transistor, and an emitter coupled to a common node;
- and
- a fourth transistor having a collector coupled to the collector of the second transistor, a base coupled to the emitter of the second transistor and the collector of the third transistor, and an emitter coupled to the emitter of the third transistor and to the common node.
An RF amplifier, comprising:
- a first stage including an Ft doubler having a collector, a base connected to an input node, and a common emitter;
- and
- a second stage including an Ft doubler having an emitter connected to the collector of the Ft doubler of the first stage, a common base, and a collector connected to an output node;
- and
- wherein each Ft doubler further comprises a first transistor, a second transistor, and a third transistor each include an emitter, a base, and a collector, wherein the collector of the first transistor is connected to the collector of the second transistor and the emitter of the first transistor is connected to the base of the second transistor, and wherein the collector of the third transistor is connected to the base of the second transistor, the base of the third transistor is connected to the base of the second transistor, and the emitter of the second transistor is connected to the emitter of the third transistor.
An RF Amplifier comprising:
- an Ft doubler for increasing an input signal, the Ft doubler including a first transistor, a second transistor, and a third transistor each include an emitter, a base, and a collector, wherein the collector of the first transistor is connected to the collector of the second transistor and the emitter of the first transistor is connected to the base of the second transistor, and wherein the collector of the third transistor is connected to the base of the second transistor, the base of the third transistor is connected to the base of the second transistor, and the emitter of the second transistor is connected to the emitter of the third transistor.
Dependencies are inferred from the claim text.