Methods of manufacturing semiconductor structures and devices including nanotubes, and semiconductor structures, devices, and systems fabricated using such methods

A method of forming a semiconductor structure, comprising:

• providing a semiconductor substrate having a first surface and a second, opposing surface;
• forming a dielectric material over at least a portion of the first surface of the semiconductor substrate;
• forming at least one recess into the dielectric material extending toward the first surface of the semiconductor substrate;
• positioning a plurality of preformed, conductive nanotubes comprising a volume of supporting material surrounding the plurality of preformed, conductive nanotubes and filling spaces between preformed, conductive nanotubes of the plurality of preformed, conductive nanotubes and a portion of a nanotube formation substrate material disposed about a periphery of the supporting material generally within the at least one recess;
• and
• forming a conductive material over the plurality of preformed, conductive nanotubes.

A method of forming a semiconductor device, comprising:

• providing a semiconductor substrate having a first surface and a second, opposing surface;
• forming a dielectric material over at least a portion of the first surface of the semiconductor substrate;
• forming at least one recess into the dielectric material extending toward the first surface of the semiconductor substrate;
• positioning a plurality of preformed nanotubes comprising a volume of supporting material surrounding the plurality of preformed nanotubes and filling spaces between preformed nanotubes of the plurality of preformed nanotubes and a portion of a nanotube formation substrate material disposed about a periphery of the supporting material generally within the at least one recess wherein at least one of the preformed nanotubes extends generally from the first surface of the semiconductor substrate at least through the at least one recess;
• affixing the plurality of preformed nanotubes generally within the at least one recess;
• and
• forming a conductive material over the at least one of the plurality of preformed nanotubes.

A method of forming an intermediate structure, comprising:

• providing a wafer-scale substrate having a first surface and a second, opposing surface;
• forming a dielectric material over at least a portion of the wafer-scale substrate;
• forming at least one cavity extending into the dielectric material toward the first surface to an intermediate surface in the dielectric material;
• and
• positioning a plurality of conductive nanotubes comprising a volume of supporting material surrounding the plurality of conductive nanotubes and filling spaces between conductive nanotubes of the plurality of conductive nanotubes and a portion of a nanotube formation substrate material disposed about a periphery of the supporting material on the intermediate surface of the at least one cavity.