Semiconductor device and method of bonding different size semiconductor die at the wafer level

A method of making a semiconductor device, comprising:

• providing a first semiconductor die including an active surface and second surface;
• forming a plurality of conductive vias through the active surface of the first semiconductor die;
• forming a first interconnect structure over the active surface of the first semiconductor die;
• disposing a second semiconductor die over the first semiconductor die with the first interconnect structure between the first and second semiconductor dies, the second semiconductor die extending outside a footprint of the first semiconductor die;
• and
• depositing an encapsulant around the first and second semiconductor dies.

A method of making a semiconductor device, comprising:

• providing a first semiconductor die including an active surface and second surface;
• forming a plurality of conductive vias through the active surface of the first semiconductor die and coplanar with the active surface of the first semiconductor die;
• depositing a first encapsulant over the first semiconductor die including on the active surface;
• forming an interconnect structure over the second surface of the first semiconductor die, the interconnect structure including a first insulating layer and a first conductive layer;
• disposing a second semiconductor die over the first semiconductor die opposite the active surface with the interconnect structure between the first and second semiconductor dies;
• depositing a second encapsulant over the second semiconductor die;
• and
• removing a portion of the first encapsulant on the active surface of the first semiconductor die.

A method of making a semiconductor device, comprising:

• providing a substrate including a plurality of conductive vias formed through the substrate;
• forming an interconnect structure over the substrate, the interconnect structure including a first insulating layer and a first conductive layer;
• depositing a first encapsulant around the substrate and interconnect structure;
• disposing a semiconductor die over the substrate with the interconnect structure between the substrate and semiconductor die;
• and
• depositing a second encapsulant over the semiconductor die after disposing the semiconductor die over the substrate.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming an interconnect structure over the substrate by,
• (a) forming a first insulating layer over the substrate, and
• (b) forming a first conductive layer over the substrate;
• depositing a first encapsulant over the substrate and interconnect structure;
• disposing a semiconductor die over the substrate with the interconnect structure between the substrate and semiconductor die;
• and
• depositing a second encapsulant over the semiconductor die after disposing the semiconductor die over the substrate.