Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a first electrode layer, a second electrode layer, a third electrode layer, and a fourth electrode layer over a first substrate;
• a liquid crystal layer over the first electrode layer and the second electrode layer;
• a first counter electrode layer and a second counter electrode layer over the liquid crystal layer;
• a second substrate over the first counter electrode layer and the second counter electrode layer;
• a first connection terminal electrically connected to the first counter electrode layer;
• a second connection terminal electrically connected to the first counter electrode layer;
• and
• a third connection terminal electrically connected to the second counter electrode layer,
• a transistor in a driver circuit, the transistor comprising:
• a channel formation region including an oxide semiconductor, the channel formation region comprising a first region;
• and
• a source region including the oxide semiconductor, the source region comprising a second region,
• wherein a concentration of oxygen in the first region is higher than a concentration of oxygen in the second region,
• wherein the oxide semiconductor in the channel formation region is substantially an i-type oxide semiconductor,
• wherein at least a part of the oxide semiconductor in the channel formation region includes crystal,
• wherein the third electrode layer is electrically connected to the first counter electrode layer through a first conductive particle,
• wherein the fourth electrode layer is electrically connected to the first counter electrode layer through a second conductive particle,
• wherein the first electrode layer is a pixel electrode formed in a position overlapping with the first counter electrode layer with the liquid crystal layer therebetween, and
• wherein the second electrode layer is an electrode layer of the driver circuit formed in a position overlapping with the second counter electrode layer with the liquid crystal layer therebetween.