Semiconductor device including a contact clip having protrusions and manufacturing thereof
AssigneeInfineon Technologies AG
InventorRalf Otremba
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a leadframe with a die pad and a first lead, a semiconductor chip with a first electrode, and a contact clip with a first contact area and a second contact area. The semiconductor chip is placed over the die pad. The first contact area is placed over the first lead and the second contact area is placed over the first electrode of the semiconductor chip. A plurality of protrusions extends from each of the first and second contact areas and each of the protrusions has a height of at least 5 μm.
Claims22
A semiconductor device, comprising:
- a die pad;
- a first lead proximate the die pad;
- a semiconductor chip disposed over the die pad and comprising a first electrode on a first major surface and a second electrode on a second major surface, the second electrode facing the die pad;
- a contact clip electrically coupling the first electrode with the first lead, the contact clip comprising a first contact area and a second contact area, wherein the first contact area is disposed over the first lead and the second contact area is disposed over the first electrode;
- a first plurality of protrusions disposed on the first contact area of the contact clip, the first plurality of protrusions overlapping with and facing the first lead, the first plurality of protrusions comprising first peaks and first valleys;
- a first solder layer disposed between the first contact area and the first lead, the first solder layer disposed within the first valleys of the first plurality of protrusions, the first valleys physically contacting the first solder layer, the first solder layer physically contacting the first lead;
- and
- a first intermetallic region disposed between the first lead and the first peaks, the first peaks physically contacting the first intermetallic region, the first lead physically contacting the first intermetallic region.
A semiconductor device, comprising:
- a die pad;
- a lead;
- a semiconductor chip arranged over the die pad and comprising an electrode arranged over a surface facing away from the die pad;
- a contact clip electrically coupling the electrode and the lead, wherein the contact clip comprises a first contact area arranged over the lead and a second contact area arranged over the electrode;
- a plurality of protrusions disposed over the second contact area of the contact clip, the plurality of protrusions overlapping with and facing the electrode, the plurality of protrusions comprising peaks and valleys;
- a solder layer arranged between the electrode and the valleys, the valleys physically contacting the solder layer, the electrode physically contacting the solder layer;
- and
- an intermetallic region arranged between the electrode and the peaks, the peaks physically contacting the intermetallic region, the electrode physically contacting the intermetallic region.
A semiconductor device, comprising:
- a die pad;
- a lead;
- a semiconductor chip arranged over the die pad and comprising an electrode arranged over a surface facing away from the die pad;
- a contact clip electrically coupling the electrode and the lead, wherein the contact clip comprises a first contact area arranged over the lead and a second contact area arranged over the electrode;
- a plurality of protrusions disposed over the first contact area of the contact clip, the plurality of protrusions overlapping with and facing the lead, the plurality of protrusions comprising peaks and valleys;
- a solder layer arranged between the lead and the valleys, the valleys physically contacting the solder layer, the lead physically contacting the solder layer;
- and
- an intermetallic region arranged between the lead and the peaks, the peaks physically contacting the intermetallic region, the lead physically contacting the intermetallic region.
Dependencies are inferred from the claim text.