US 8,987,691 B2 · Ion implanter and ion implant method thereof

Abstract

An ion implanter and an ion implant method are disclosed. Essentially, the wafer is moved along one direction and an aperture mechanism having an aperture is moved along another direction, so that the projected area of an ion beam filtered by the aperture is two-dimensionally scanned over the wafer. Thus, the required hardware and/or operation to move the wafer may be simplified. Further, when a ribbon ion beam is provided, the shape/size of the aperture may be similar to the size/shape of a traditional spot beam, so that a traditional two-dimensional scan may be achieved. Optionally, the ion beam path may be fixed without scanning the ion beam when the ion beam is to be implanted into the wafer, also the area of the aperture may be adjustable during a period of moving the aperture across the ion beam.

Claims27

Dependent claims

An ion implant method, comprising:

providing a wafer, a fixed ribbon ion beam that is not scanned, and an aperture apparatus having an aperture;
filtering said ribbon ion beam by using said aperture apparatus so that said wafer is implanted by part of said ribbon ion beam passing through said aperture;
and
using the movement of said wafer and the movement of said aperture to achieve a two-dimensional wafer scan,
wherein a length of a cross section of the ion beam in a longitudinal direction thereof is smaller than a length of the wafer in the longitudinal direction.

2 more elements

An ion implanter, comprising:

an ion beam assembly configured to generate a fixed ion beam that is not scanned;
a wafer moving mechanism configured to move a wafer along a first direction, wherein the movement direction of said wafer is vertical to said ion beam so that the incident angle between said wafer and said ion beam is fixed during a period of moving said wafer across said ion beam;
an aperture mechanism having an aperture configured to filter said ion beam before said wafer being implanted;
and
an aperture moving mechanism configured to move said aperture mechanism along a second direction intersecting said first direction;
whereby a projected area of said filtered ion beam is two-dimensionally scanned over said wafer when said wafer and said aperture mechanism are moved along said first and second directions separately, and
wherein a length of a cross section of the ion beam in a longitudinal direction thereof is smaller than a length of the wafer in the longitudinal direction.

4 more elements

An ion implanter, comprising:

an ion beam assembly capable of generating a fixed ion beam that is not scanned;
a wafer moving mechanism configured to move a wafer along a first direction;
an aperture mechanism having an aperture for filtering said ion beam before said wafer being implanted, wherein the area of said aperture is smaller than the cross-sectional area of said ion beam during a period of moving said aperture mechanism across said ion beam;
and
an aperture moving mechanism configured to move said aperture along a second direction intersecting said first direction;
whereby a projected area of said filtered ion beam is two-dimensionally scanned over said wafer when said wafer and said aperture are moved along said first and second directions separately, and
wherein a length of a cross section of the ion beam in a longitudinal direction thereof is smaller than a length of the wafer in the longitudinal direction.

4 more elements

An ion implant method, comprising:

providing a wafer, a fixed ion beam that is not scanned, and an aperture mechanism having an aperture configured to filter said ion beam before implanting said wafer;
and
moving said wafer along a first direction and said aperture mechanism along a second direction intersecting said first direction respectively, so that a projected area of said filtered ion beam is two-dimensionally scanned over said wafer;
wherein at least one of the following is performed:
fixing the incident angle between said wafer and said ion beam during a period of moving said wafer across said ion beam;
and
keeping the area of said aperture smaller than the cross-sectional area of said ion beam during a period of moving said aperture across said ion beam;
and
wherein a length of a cross section of the ion beam in a longitudinal direction thereof is smaller than a length of the wafer in the longitudinal direction.

6 more elements

Dependencies are inferred from the claim text.

Ion implanter and ion implant method thereof

Life of this patent

Ion implanter and ion implant method thereof

Life of this patent

Abstract

Claims27