MEMS devices and methods of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Abstract
A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.
Claims20
A method for forming a microelectromechanical system (MEMS) device comprising:
- forming a MEMS structure over a first substrate, wherein the MEMS structure comprises a movable element, wherein the forming the MEMS structure further comprises:
- depositing one or more dielectric layers on the first substrate;
- patterning at least one of the one or more dielectric layers;
- fusion bonding a wafer on the one or more dielectric layers;
- depositing a first conductive material on the wafer;
- and
- etching the wafer to form the movable element, wherein the etching allows for free movement of the movable element in at least one axis;
- etching trenches in a second substrate;
- filling the trenches with a second conductive material;
- depositing a third conductive material over the second conductive material and the second substrate;
- densifying the first substrate and the second substrate;
- bonding the MEMS structure to the second substrate, wherein the bonding is between the first conductive material and the third conductive material, and the bonding forms a vacuum chamber between the first and second substrates;
- and
- thinning a backside of the second substrate, wherein the thinning exposes the second conductive material in the trenches.
A method for forming a MEMS device comprising:
- forming a MEMS structure over a first substrate, wherein the MEMS structure comprises a movable element, wherein the forming the MEMS structure further comprises:
- depositing one or more dielectric layers on the first substrate;
- bonding a wafer to the one or more dielectric layers;
- depositing a first conductive material on the wafer;
- and
- etching the wafer to form the movable element, wherein the etching allows for free movement of the movable element in at least one axis;
- depositing a second conductive material over a second substrate;
- eutectically bonding the MEMS structure to the second substrate, wherein the bonding is between the first conductive material and the second conductive material, and the bonding forms a vacuum chamber between the first and second substrates;
- and
- forming through substrate vias (TSVs) extending through the second substrate, the TSVs being filled with a polysilicon material, wherein the polysilicon material is in electrical and physical contact with the second conductive material.
A method for forming a MEMS device comprising:
- forming a MEMS structure over a first substrate, wherein the MEMS structure comprises a movable element, wherein the forming the MEMS structure further comprises:
- depositing a first dielectric layer on the first substrate;
- patterning the first dielectric layer;
- fusion bonding a wafer on the first dielectric layer;
- depositing a first conductive material on the wafer;
- and
- etching the wafer to form the movable element, wherein the etching allows for free movement of the movable element in at least one axis;
- depositing a second conductive material over a second substrate;
- densifying the first substrate and the second substrate;
- and
- eutectically bonding the MEMS structure to the second substrate, wherein the bonding is between the first conductive material and the second conductive material, and the bonding forms a vacuum chamber between the first and second substrates;
- and
- forming a through substrate via (TSV) extending through the second substrate, the TSV being filled with a third conductive material, the TSV contacting the second conductive material, wherein the third conductive material is different than the first conductive material and the second conductive material.
Dependencies are inferred from the claim text.