Substrate processing method and storage medium
AssigneeTokyo Electron Limited
InventorsSungtae Lee, Masahiro Ogasawara, Masahiro Ito
Life of this patent
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Abstract
Disclosed is a substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer. The intermediate layer is etched under a processing pressure of 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF4, CHF3, and C4F8, and the mask layer is etched by using a COS-containing gas as a processing gas.
Claims33
A substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer, the method comprising:
- etching the intermediate layer under a processing chamber pressure of about 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using a first processing gas which is a gaseous mixture including CF4 gas, CHF3 gas, and C4F8 gas;
- and
- etching the mask layer by using a second processing gas including a carbonyl sulfide (COS) gas,
- wherein the intermediate layer is made of a high-molecular resin and the mask layer is an amorphous carbon layer.
A substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer, the method comprising:
- etching the target layer by using a processing gas including a C6F6 gas and at least one of an Ar gas and an O2 gas, wherein the processing gas as a whole flows at a first flow rate and the C6F6 gas flows at a second flow rate,
- wherein the intermediate layer is made of a high-molecular resin, the mask layer is an amorphous carbon layer, and the target layer is a silicon oxide layer,
- wherein in said etching the target layer, a ratio of the second flow rate to the first flow rate is set such that the amorphous carbon layer at least partially remains when said etching the target layer is finished and bowing is suppressed in the etched target layer.
A substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer, the method comprising:
- etching the target layer, said etching including:
- a primary etching using a processing gas including a C4F6 gas, and
- a secondary etching using a gas mixture including C4F6 gas and a carbonyl sulfide (COS) gas,
- wherein the primary etching is performed without supplying the COS gas, and
- wherein the mask layer is an amorphous carbon layer and the target layer is a SiO2 layer.
A substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer, the method comprising:
- etching the intermediate layer under a processing chamber pressure of about 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using a first processing gas which is a gaseous mixture including CF4 gas, CHF3 gas, and C4F8 gas;
- etching the mask layer by using a second processing gas including a carbonyl sulfide (COS) gas;
- and
- etching the target layer by using a third processing gas including a C6F6 gas and an O2 gas.
A substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer, the method comprising:
- etching the intermediate layer under a processing chamber pressure of about 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using a first processing gas which is a gaseous mixture including CF4, CHF3, and C4F8;
- etching the mask layer by using a second processing gas including a carbonyl sulfide (COS) gas;
- and
- etching the target layer, which includes:
- a primary etching using a third processing gas including a C4F6;
- and
- a secondary etching using a mixture gas including C4F6 gas and a COS gas,
- wherein the primary etching is performed without supplying the COS gas, and
- wherein the mask layer is an amorphous carbon layer and the target layer is a SiO2 layer.
Dependencies are inferred from the claim text.