Plasma etching method, plasma etching device, and method for producing photonic crystal
AssigneeJapan Science and Technology Agency
InventorsSusumu Noda, Shigeki Takahashi
Life of this patent
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Abstract
A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the following process: An electric-field control device having an ion-introducing orifice penetrating therethrough in a direction inclined from the normal to the surface of a base body is placed on or above the surface of this base body. Plasma is generated on the surface of the base body on or above which the electric-field control is placed. A potential difference is formed between the plasma and the base body so as to attract ions in the plasma toward the base body.
Claims14
A plasma etching method, wherein a base body is etched by a process including:
- placing an electric-field shaping device on or above a surface of a base body, the electric-field shaping device having an ion-introducing orifice whose diameter is larger than a thickness of an ion sheath formed by plasma, the ion-introducing orifice penetrating fully from a first surface to a second surface in a direction inclined from a normal to the surface of the base body, and shaping an electric field in the ion-introducing orifice;
- generating plasma on the surface of the base body on or above which the electric-field shaping device is placed;
- and
- forming a potential difference between the plasma and the base body so as to attract ions in the plasma toward the base body, thereby directing the ions to the surface of the base body through the ion-introducing orifice.
A method for producing a photonic crystal, wherein a dielectric base body is etched in a predetermined pattern by a process including the following steps:
- a mask having a plurality of holes in a predetermined pattern is set at a hole creation area which is a portion of a surface of the base body;
- an electric-field shaping device having an ion-introducing orifice whose diameter is larger than a thickness of an ion sheath formed by plasma, the ion-introducing orifice penetrating fully from a first surface to a second surface in a direction inclined from a normal to the surface of the base body is placed so that an electric field in the ion-introducing orifice is shaped and a mouth of the ion-introducing orifice facing the base body is adjusted at a position of the hole creation area;
- plasma is generated on the surface of the base body on or above which the electric-field shaping device is placed;
- and
- a potential difference is formed between the plasma and the base body so as to direct ions in the plasma toward the surface of the base body through the ion-introducing orifice.
Dependencies are inferred from the claim text.