Method of forming patterns
AssigneeSamsung Electronics Co., Ltd.
InventorsEun-sung Kim, Kyoung-seon Kim, Jae-woo Nam, Chul-ho Shin, Shi-young Yi
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Abstract
A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.
Claims20
A method of forming patterns comprising the steps of:
- forming a photoresist film on a substrate;
- exposing the photoresist film with a first dose of light to form a first area and a second area in the photoresist film;
- forming a first hole and a second hole by removing the first area and the second area with a first developer;
- exposing the photoresist film with a second dose of light to form a third area in the photoresist film between the first hole and the second hole;
- and
- forming a third hole between the first hole and the second hole by removing the third area with a second developer.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a photoresist film on a substrate;
- aligning a photomask including at least two light transmitting areas over the photoresist film;
- irradiating a first dose of light through the photomask to form at least two areas in the photoresist film, wherein each of the at least two areas is positioned below each of at least two light transmitting areas and each of at least two areas is smaller than each of the at least two transmitting areas;
- forming at least two holes by removing the at least two areas from the photoresist film with a first developer;
- aligning the photomask over the photoresist film including the at least two holes;
- irradiating a second dose of light through the photomask to form a third area in the photoresist film, wherein the third area is positioned between the at least two holes in the photoresist film;
- and
- forming a third hole by removing the third area from the photoresist film with a second developer.
Dependencies are inferred from the claim text.