Method of manufacturing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate obtained from the manufacturing method

A method of manufacturing a single crystal 3C-SiC substrate where a single crystal 3C-SIC layer is formed on a base substrate by epitaxial growth, comprising:

• a first growing stage of forming the single crystal 3C-SIC layer to have a surface state configured with a surface with high flatness and surface pits scattering in the surface;
• and
• a second growing stage of further epitaxially growing the single crystal 3C-SiC layer obtained in the first growing stage so as to fill the surface pits,
• wherein the first growing stage is switched to the second growing stage by at least one of a reduction of a flow rate of material gas, a reduction of a filming pressure, and an increase of a substrate temperature.

A method of manufacturing a single crystal 3C-SiC substrate where a single crystal 3C-SiC layer is formed on a base substrate by epitaxial growth, comprising:

• a first growing stage of forming the single crystal 3C-SiC layer to have a surface state configured with a surface with high flatness and surface pits scattering in the surface;
• and
• a second growing stage of further epitaxially growing the single crystal 3C-SiC layer obtained in the first growing stage so as to fill the surface pits,
• a main component of material gas when the single crystal 3C-SiC layer is formed on the base substrate by the epitaxial growth is monomethylsilane,
• wherein in the first growing stage, a substrate temperature is between 970 and 1120° C., a flow rate of monomethylsilane to be contained in the material gas is between 1.0 and 30.0 sccm per wafer, and a filming pressure exceeds exceeds 9×10−6 Torr and is 4×10−1 Torr or below, and
• wherein in the second growing stage, the flow rate of monomethylsilane to be contained in the material gas is 6.0 sccm or lower per wafer, the substrate temperature is between 1100° C. and below a melting temperature of the base substrate, and the filming pressure is between 1×10−7 and 6×10−5 Torr.