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AssigneeNovellus Systems, Inc.
InventorsRamesh Chandrasekharan, Chunguang Xia, Karl F. Leeser, Damien Slevin, Thomas G. Jewell
Estimating the term…
A point-of-use valve (POU valve) manifold is provided that allows for multiple precursors to be delivered to a semiconductor processing chamber through a common outlet. The manifold may have a plurality of precursor inlets and a purge gas inlet. The manifold may be configured such that there are zero dead legs in the manifold when the purge gas is routed through the manifold, and may provide mounting location for the POU valves that alternate sides. One or more internal flow path volumes may include elbow features.
A valve manifold for use in a semiconductor processing tool, comprising:
An apparatus for delivery of a purge gas, a first process gas, and a second process gas to a semiconductor processing tool, the apparatus comprising:
A valve manifold for use in a semiconductor processing tool, comprising:
An apparatus for delivery of a purge gas, a first process gas, and a second process gas to a semiconductor processing tool, the apparatus comprising:
A valve manifold for use in a semiconductor processing tool, comprising:
An apparatus for delivery of a purge gas, a first process gas, and a second process gas to a semiconductor processing tool, the apparatus comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Atomic layer deposition [ALD]: characterized by the apparatus
Characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber: gas plumbing upstream…
Construction of housing ; Use of materials therefor: housing formed from a plurality of the same valve elements
With cleaner, lubrication added to fluid or liquid sealing at valve interface: cleaning or steam sterilizing
About 6 years 7 months of term left · ends 1 Jun 2033 (estimated)
In an atomic layer deposition (ALD) tool, multiple precursors may be used to facilitate semiconductor wafer manufacturing processes. The precursors may form a deposition layer upon combining. To prevent premature deposition, i.e., within the gas or fluid lines leading to the process chamber, the precursors may be kept separate from each other.
The systems, methods and devices of the disclosure each have several innovative aspects, no single one of which is solely responsible for the desirable attributes disclosed herein. One innovative aspect of the subject matter described in this disclosure can be implemented in a variety of ways.
In some implementations, a valve manifold for use in a semiconductor processing tool may be provided. The valve manifold may include a manifold body. The manifold body may include a purge gas inlet, a manifold outlet, the manifold outlet located on a first side of the manifold body, a first valve interface, the first valve interface located on a second side of the manifold body different from the first side, and a second valve interface, the second valve interface located on a third side of the manifold body different from the first side and the second side. The first valve interface and the second valve interface may each include a first port, a second port, and a third port. The second port of the first valve interface may be configured to connect to a first process gas supply, and the third port of the first valve interface may be fluidly connected with the first port of the second valve interface via a first flow path internal to the manifold body and having no dead legs. The second port of the second valve interface may be fluidly connected with an interface configured to connect to a second process gas supply, and the third port of the second valve interface may be fluidly connected with the manifold outlet by a second flow path internal to the manifold body and having no dead legs.
FIG. 1A shows an off-angle view of an example point-of-use (POU) valve manifold supporting two precursors, a purge/carrier gas source, a precursor dump shunt, and an outlet.
FIG. 1B shows the example POU valve manifold of FIG. 1A with commercial-off-the-shelf (COTS) valves attached.
FIG. 1C shows the internal flow path volumes of the example POU valve manifold of FIG. 1A.
The techniques and devices disclosed herein may be implemented in a variety of ways, including, but not limited to, the various implementations described below. It is to be understood that one of ordinary skill in the art may use the techniques and devices described herein to produce other implementations consistent with the information disclosed in this document, and that such alternative implementations are also to be considered as within the scope of this disclosure.
FIG. 1A shows an off-angle view of an example point-of-use (POU) valve manifold 100 supporting two precursors. The valve manifold 100 includes a manifold body 102, e.g., a block of material such as stainless steel, and includes internal passages for transporting gases or fluids to various destinations, including a purge/carrier gas source, a precursor dump shunt, and an outlet. As can be seen, a manifold outlet 106 may be provided that connects, e.g., via a showerhead or gas distribution manifold, to a semiconductor processing chamber. Also shown are a first process gas supply inlet 118 for a first precursor, a second process gas supply inlet 122 for a second precursor, and a purge gas inlet 104. A dump shunt outlet 136 associated with the second process gas supply inlet 120 is also visible. Two c-seal surfaces are also visible on the top surface of the valve manifold 100. In this particular design, high-flow C-seals are used to seal the valve interfaces. However, other seal technologies may be used as well, including, but not limited to, 1.125″ standard C-seals, W-seals, elastomeric seals, etc, as consonant with design requirements. The arrangement shown here is configured to allow one 2-port and one 3-port valve to be mounted on the top surface of the manifold. The 3-port valve may be mounted to a second valve interface 116 (a first valve interface is described below but is not visible in this view) that may include a first port 110, a second port 112, and a third port 114. The 2-port valve may be mounted to a purge valve interface 128 that may include a first port 130 and a second port 132.
FIG. 1B shows the POU valve manifold 100 of FIG. 1A with valves attached. COTS valves or custom 2-port or 3-port port diaphragm or similar valves may be used. A valve manifold apparatus 146 may be formed by connecting, for example, a first valve 148 to a first valve interface (not visible in this view), a second valve 160 to the second valve interface, a purge valve 172 to the purge valve interface 128, and a dump valve 174 to a dump shunt interface (not visible in this view).