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US 8,981,473 B2Granted
Dielectric isolation substrate and semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsRyo Wada, Kaori Yoshioka, Norio Yasuhara, Tomoko Matsudai, Yuichi Goto
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Abstract
According to one embodiment, in a dielectric isolation substrate, an insulating film having a first thickness is provided on a semiconductor substrate. A semiconductor layer of a first conductivity type having a second thickness is provided on the insulating film. An impurity diffusion layer of a second conductivity type is provided partially in a lower portion of the semiconductor layer and is in contact with the insulating film.
Claims13
A semiconductor device, comprising:
- a semiconductor substrate;
- an insulating film provided on the semiconductor substrate and having a first thickness;
- a semiconductor layer of a first conductivity type provided on the insulating film and having a second thickness and a first impurity concentration;
- a first impurity diffusion layer of the first conductivity type provided in the semiconductor layer and having a second impurity concentration that is higher than the first impurity concentration;
- a first electrode contacting the first impurity diffusion layer;
- a second impurity diffusion layer of a second conductivity type provided in the semiconductor layer so as to surround the first impurity diffusion layer within a first plane that is parallel to the semiconductor substrate, and having a third impurity concentration;
- a second electrode contacting the second impurity diffusion layer;
- and
- a third impurity diffusion layer of the second conductivity type provided in the semiconductor layer so as to be between the second impurity diffusion layer and the insulating film in a direction orthogonal to the first plane and to contact the second impurity diffusion layer, the third impurity diffusion layer having a fourth impurity concentration that is not less than the third impurity concentration.
6 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- an insulating film provided on the semiconductor substrate and having a first thickness;
- a semiconductor layer of a first conductivity type provided on the insulating film and having a second thickness and a first impurity concentration;
- a first impurity diffusion layer of a second conductivity type provided in the semiconductor layer and having a second impurity concentration that is higher than the first impurity concentration;
- a first electrode electrically contacting the first impurity diffusion layer;
- a second impurity diffusion layer of the second conductivity type provided in the semiconductor layer so as to surround the first impurity diffusion layer within a first plane that is parallel to the semiconductor substrate, and having a third impurity concentration;
- a second electrode electrically contacting to the upper portion of the second impurity diffusion layer;
- a third impurity diffusion layer of the second conductivity type provided in the semiconductor layer so as to be between the second impurity diffusion layer and the insulating film in a directional orthogonal to the first plane and to contact the second impurity diffusion layer, the third impurity diffusion layer having a fourth impurity concentration that is not less than the third impurity concentration;
- a fourth impurity diffusion layer of the first conductivity type provided in an upper portion of the second impurity diffusion layer and connected to the second electrode;
- and
- a gate electrode provided on a portion of the second impurity diffusion layer with a gate insulating film interposed therebetween, the portion of the second impurity diffusion layer being between semiconductor layer and the fourth impurity diffusion layer.
8 more elements
Dependencies are inferred from the claim text.