Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

A method of manufacturing a semiconductor light emitting device, the method comprising:

• sequentially laminating a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, an insulating layer, a first electrode layer, and a conductive substrate;
• forming an exposed area at an interface between the second electrode layer and the second conductivity type semiconductor layer;
• and
• forming at least one contact hole in the first electrode layer, the contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer,
• wherein the forming of the exposed area of the second electrode layer comprises mesa etching the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer.

A semiconductor light emitting device package comprising:

• a semiconductor light emitting device package body having a recessed part defined at an upper surface thereof;
• a first lead frame and a second lead frame disposed on the semiconductor light emitting device package body, exposed at a lower surface of the recessed part, and separated from each other by a predetermined distance;
• a semiconductor light emitting device disposed on the first lead frame, wherein:
• the semiconductor light emitting device comprises a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, an insulating layer, a first electrode layer, and a conductive substrate sequentially laminated,
• the second electrode layer comprises an exposed area at an interface between the second electrode layer and the second conductivity type semiconductor layer,
• the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer, and
• the semiconductor light emitting device further comprises an electrode pad unit disposed at the exposed area of the second electrode layer, and the electrode pad unit is electrically connected to the second lead frame.