Piezoelectric material
AssigneesCanon Kabushiki Kaisha, Tokyo Institute of Technology, Sophia University, National Institute of Advanced Industrial Science and Technology
InventorsMakoto Kubota, Toshihiro Ifuku, Hiroshi Funakubo, Keisuke Yazawa, Hiroshi Uchida, Takashi Iijima, Bong-yeon Lee
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Abstract
Provided is a piezoelectric material having a high Curie temperature and satisfactory piezoelectric characteristics, the piezoelectric material being represented by the following general formula (1): A(ZnxTi(1-x))yM(1-y)O3 (1) where A represents a Bi element, M represents at least one element selected from Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value of 0.4≦x≦0.6; and y represents a numerical value of 0.17≦y≦0.60.
Claims7
A piezoelectric material comprising a crystal system which contains at least a monoclinic structure and which is represented by general formula (1):
- A(ZnxTi(1-x))yM(1-y)O3 (1),
- where A represents a Bi element, M represents at least one element selected from Fe, Al, Mn, Y, Ga, and Yb;
- x represents a numerical value of 0.4≦x≦0.6;
- and y represents a numerical value of 0.17≦y≦0.60,
- wherein the piezoelectric material is a film having a thickness of from 200 nm to 10 μm and is formed on a substrate, and
- wherein the piezoelectric material is formed by a metal organic chemical vapor deposition method.
Dependencies are inferred from the claim text.